Bezahlverfahren
IAUT300N10S5N015ATMA1 +BOM
Transistor for power operations with a voltage rating of 75V to 120V
HSOF-8-
Hersteller:
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Herstellerteil #:
IAUT300N10S5N015ATMA1
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Datenblatt:
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Series:
OptiMOS™-5
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
100 V
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EDA/CAD Modelle:
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Verfügbarkeit: 5939 Stck
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IAUT300N10S5N015ATMA1 Allgemeine Beschreibung
The IAUT300N10S5N015ATMA1 is a top-tier high-power IGBT module that has been expertly crafted by Infineon Technologies. With a robust current rating of 300A, a rock-solid voltage rating of 1000V, and an impressive power rating of 1500W, this module is perfectly suited for demanding high-power applications across various industries. Its compact and rugged design ensures durability and resilience in even the harshest operating conditions, while the built-in temperature sensor provides essential protection against overheating, guaranteeing uninterrupted performance and an extended operational lifespan. Moreover, the module's low switching and conduction losses contribute to heightened efficiency and mitigated power dissipation, making it a standout choice for high-power applications. Its built-in gate driver and signal conditioning circuitry further simplify the design and integration process for high-power systems, adding an extra layer of convenience and usability. In line with rigorous industry standards, the IAUT300N10S5N015ATMA1 is RoHS-compliant and has undergone rigorous testing to ensure unwavering quality and dependability
Hauptmerkmale
- Packaging Options: RoHS Compliant
- Soldering Method: SMT
- Reel Quantity: 2500pcs
- Diameter: 12.7mm
- Height: 3.5mm
Anwendung
- Solar power
- Automated systems
- Backup power
Spezifikationen
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | OptiMOS™-5 |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 1.5mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 275µA | Gate Charge (Qg) (Max) @ Vgs | 216 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 16011 pF @ 50 V |
FET Feature | - | Power Dissipation (Max) | 375W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IAUT300 | RHoS | yes |
PBFree | yes | HalogenFree | yes |
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IAUT300N10S5N015ATMA1 Datenblatt PDF
IAUT300N10S5N015ATMA1 PDF Vorschau
In Stock: 5.939
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $6,176 | $6,18 |
10+ | $5,429 | $54,29 |
30+ | $4,974 | $149,22 |
100+ | $4,593 | $459,30 |
Die unten angegebenen Preise dienen nur als Referenz.
Alle Stücklisten (BOM) können per E-Mail gesendet werden an [email protected], oder füllen Sie das untenstehende Formular aus, um ein Angebot für IAUT300N10S5N015ATMA1 zu erstellen, garantierte Angebote zurück innerhalb 12 Std.
Nice build quality, thanks!