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Siehe Technische Spezifikationen

IAUC100N08S5N043ATMA1 +BOM

N Channel Power MOSFET for Automotive Applications

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

IAUC100N08S5N043ATMA1
Datenblatt:

IAUC100N08S5N043ATMA1 Datenblatt (PDF)
Series:

Automotive, AEC-Q101, OptiMOS™-5
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

80 V
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IAUC100N08S5N043ATMA1

IAUC100N08S5N043ATMA1 Allgemeine Beschreibung

With a maximum power dissipation of 460W, the IAUC100N08S5N043ATMA1 is a powerhouse in its own right. What sets this module apart is its integrated high-speed driver and essential protection features like under-voltage lockout and over-current protection. These enhancements not only safeguard the module but also contribute to a reliable and durable performance under demanding conditions

Infineon Technologies Corporation Inventar

Hauptmerkmale

N-channel - Enhancement mode
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
100% Avalanche tested

Infineon Technologies Corporation Originalbestand

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	Automotive, AEC-Q101, OptiMOS™-5
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V	Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	Rds On (Max) @ Id, Vgs	4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.8V @ 63µA	Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	3860 pF @ 40 V
FET Feature	-	Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IAUC100	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	80 V	Id - Continuous Drain Current	100 A
Rds On - Drain-Source Resistance	5 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.2 V	Qg - Gate Charge	56 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	125 W	Channel Mode	Enhancement
Configuration	Single	Fall Time	10 ns
Product Type	MOSFET	Rise Time	4 ns
Factory Pack Quantity	5000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	13 ns
Typical Turn-On Delay Time	8 ns	Part # Aliases	IAUC100N08S5N043 SP001780758
Unit Weight	0.003966 oz

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..