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IRF3710PBF +BOM

Trans MOSFET N-CH Si 100V 57A 3-Pin(3+Tab) TO-220AB Tube

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

IRF3710PBF Allgemeine Beschreibung

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

irf3710pbf irf3710pbf

Hauptmerkmale

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard through-hole power package
  • High-current rating
  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification
  • High performance in low frequency applications
  • Standard pin-out allows for drop-in replacement
  • High current capability
irf3710pbf irf3710pbf

Spezifikationen

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series HEXFET®
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 23mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3130 pF @ 25 V
FET Feature - Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Base Product Number IRF3710 RHoS yes
PBFree yes HalogenFree yes
Product Category MOSFET Mounting Style Through Hole
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 57 A
Rds On - Drain-Source Resistance 23 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 86.7 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 200 W Channel Mode Enhancement
Configuration Single Height 15.65 mm
Length 10 mm Product Type MOSFET
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Width 4.4 mm
Unit Weight 0.068784 oz

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Bewertungen und Rezensionen

Mehr
C
C**r 11.23.2022

I arrive sooner than expected, well packaged and in perfect condition.

8
F
F**l 11.20.2022

The parcel came in 45 days, packed well, the quality is also good, thanks.

12
O
O**a 09.24.2022

Excellent adapter, i recommend.

18
B
B**n 10.22.2021

Fast delivery. Fully soldered. This is ESP32-S - no PSRAM, max resolution is 160x120

6

Rezensionen

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IRF3710PBF Datenblatt PDF

Preliminary Specification IRF3710PBF PDF Herunterladen

IRF3710PBF PDF Vorschau

In Stock: 6.769

Minimum Order: 1

Menge. Einzelpreis Ext. Preis
1+ $0,586 $0,59
10+ $0,509 $5,09
50+ $0,405 $20,25
100+ $0,361 $36,10
500+ $0,346 $173,00
1000+ $0,339 $339,00

Die unten angegebenen Preise dienen nur als Referenz.

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