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Siehe Technische Spezifikationen

IRFP3415PBF +BOM

N-Channel 150 V 43A (Tc) 200W (Tc) Through Hole TO-247AC

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

IRFP3415PBF
Datenblatt:

IRFP3415PBF Datenblatt (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

150 V
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IRFP3415PBF

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IRFP3415PBF Allgemeine Beschreibung

N-Channel 150 V 43A (Tc) 200W (Tc) Through Hole TO-247AC

Infineon Technologies Corporation Inventar

Hauptmerkmale

Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard through-hole power package
High current rating
Increased ruggedness
Wide availability from distribution partners
Industry standard qualification level
High performance in low frequency applications
Standard pinout allows for drop in replacement
High current carrying capability

Infineon Technologies Corporation Originalbestand

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	HEXFET®
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V	Current - Continuous Drain (Id) @ 25°C	43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	42mOhm @ 22A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	200 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	2400 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IRFP3415	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	150 V	Id - Continuous Drain Current	43 A
Rds On - Drain-Source Resistance	42 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.8 V	Qg - Gate Charge	200 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	200 W	Channel Mode	Enhancement
Configuration	Single	Height	20.7 mm
Length	15.87 mm	Product Type	MOSFET
Factory Pack Quantity	400	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	5.31 mm
Unit Weight	0.211644 oz

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