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IRG4BC20SDPBF +BOM

Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220AB

Hersteller:

Infineon
Herstellerteil #:

IRG4BC20SDPBF
Datenblatt:

IRG4BC20SDPBF Datenblatt (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

600 V
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IRG4BC20SDPBF

IRG4BC20SDPBF Allgemeine Beschreibung

The IRG4BC20SDPBF is an IGBT transistor with a collector current of 19A and a collector emitter voltage of 1.6V. It has a power dissipation of 60W and a maximum operating temperature range of -55°C to +150°C. This TO-220AB transistor has 3 pins and a voltage rating of 600V. With a fall time of 35ns and a rise time of 35ns, it is suitable for various applications that require fast switching speeds. The transistor has a pulsed current rating of 38A and a N Channel polarity. It features a through hole termination type and is ideal for use in power electronic circuits where high voltage and current handling capabilities are required

Hauptmerkmale

Extremely low voltage drop 1.4Vtyp. @ 10A
S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
Very Tight Vce(on) distribution
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry standard TO-220AB package
Lead-Free
Benefits
Generation 4 IGBTs offer highest efficiencies available
IGBTs optimized for specific application conditions
HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing
Lower losses than MOSFETs conduction and Diode losses

Spezifikationen

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Collector-Emitter Saturation Voltage	1.85 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Continuous Collector Current at 25 C	19 A
Pd - Power Dissipation	60 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Height	8.77 mm
Length	10.54 mm	Product Type	IGBT Transistors
Factory Pack Quantity	1000	Subcategory	IGBTs
Width	4.69 mm	Part # Aliases	SP001541346
Unit Weight	0.211644 oz

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