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Siehe Technische Spezifikationen

IXGH20N60BU1 +BOM

TRANS IGBT CHIP N-CH 600V 40A 3-PIN(3+TAB) TO-247AD

Hersteller:

Ixys
Herstellerteil #:

IXGH20N60BU1
Datenblatt:

IXGH20N60BU1 Datenblatt (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

600 V
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IXGH20N60BU1

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IXGH20N60BU1 Allgemeine Beschreibung

The IXGH20N60BU1 is a high voltage, high speed insulated gate bipolar transistor (IGBT) designed for applications requiring high efficiency and fast switching characteristics. It features a maximum voltage rating of 600V, a continuous current rating of 20A, and a maximum power dissipation of 250W. This IGBT utilizes a non-punch through (NPT) trench technology to provide low conduction and switching losses, making it suitable for use in various power electronic applications such as motor drives, induction heating, and power supplies.The IXGH20N60BU1 has a low saturation voltage of 1.85V and a short-circuit withstand time of 5μs, offering high reliability and protection against overcurrent conditions. It also features a built-in soft recovery anti-parallel diode that reduces switching losses and improves efficiency in switching applications.This IGBT is housed in a TO-247 package, providing excellent thermal performance and mechanical strength. It is RoHS compliant, ensuring it meets environmental regulations for lead-free soldering.

Hauptmerkmale

High power IGBT with freewheeling diode
Collector current: 40A
Collector to emitter voltage: 600V
Fall time: 55ns
Integrated diode
Ultrafast soft recovery diode
High frequency operation
Low VCE(sat)
Designed for optimum switching performance in high power applications

Anwendung

Motor control applications
Industrial inverters
Switching power supplies
Welding equipment
Induction heating
Solar inverters
UPS systems
Electric vehicle charging systems
Renewable energy systems
Power factor correction

Spezifikationen

Product Category	IGBT Transistors	Technology	Si
Mounting Style	SMD/SMT	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Collector-Emitter Saturation Voltage	1.7 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Continuous Collector Current at 25 C	40 A
Pd - Power Dissipation	150 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	IXGH20N60
Gate-Emitter Leakage Current	100 nA	Product Type	IGBT Transistors
Factory Pack Quantity	30	Subcategory	IGBTs
Unit Weight	0.229281 oz

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..