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NOIH2SM1000S-HHC +BOM

CMOS Image Sensor 1024H x 1024V 18µm x 18µm 84-JLCC (26.8x26.8)

Hersteller:

onsemi
Herstellerteil #:

NOIH2SM1000S-HHC
Datenblatt:

NOIH2SM1000S-HHC Datenblatt (PDF)
Type:

CMOS
Pixel Size:

18µm x 18µm
Active Pixel Array:

1024H x 1024V
Frames Per Second:

10
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an NOIH2SM1000S-HHC

NOIH2SM1000S-HHC Allgemeine Beschreibung

HAS2 is a member in the STAR family of radiation-tolerant CMOS image sensors. The device has an array of 1024 x 1024 active pixels (18 µm pixel pitch) and supports on-chip Non-Destructive Readout and multiple windowing.

The STAR family is a result of extensive research and irradiation experiments in developing radiation-hardened CMOS pixels and readout electronics. These structures are qualified up to a total dose irradiation of 300 krad.

Radiation hardened CMOS images play an important role in radiation environments where normal CMOS or CCD image sensors cannot survive, and where CRT image tubes are too expensive, too heavy or too large.

Export restrictions from the European Union require technical information concerning this device to be controlled for customers outside of the EU. The datasheet as well as any appropriate technical documents for this device are available in the Image Sensor Portal, available to customers with an NDA (and, as appropriate, an export license) in place with ON Semiconductor.

Hauptmerkmale

Radiation hard
Supports on-chip Non-Destructive Readout and multiple windowing

Anwendung

Space science
Star tracker
Nuclear inspection

Spezifikationen

Series	-	Type	CMOS
Pixel Size	18µm x 18µm	Active Pixel Array	1024H x 1024V
Frames per Second	10	Voltage - Supply	3.3V
Operating Temperature	-40°C ~ 85°C (TA)	Base Product Number	NOIH2S

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