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PC28F256J3F95A +BOM

This NOR flash memory chip is supplied in a tray format for easy handling and storage during manufacturing processes

PC28F256J3F95A Allgemeine Beschreibung

The PC28F256J3F95A from Micron Technology is a versatile NAND Flash memory chip that offers impressive storage capacity and high-speed data access. Designed for compatibility with a range of embedded systems, including automotive, industrial, and consumer electronics, this chip is well-suited for a variety of applications requiring reliable performance and efficient data storage. Its compact 48-ball fine pitch ball grid array (FBGA) package type makes it easy to integrate into existing designs, while its extended voltage range of 2.7V to 3.6V ensures flexibility in powering options. This NAND Flash memory chip is known for its fast read and program times, making it ideal for tasks such as firmware storage, boot code storage, and data logging. Its durable construction allows for use in harsh environmental conditions, providing a dependable solution for demanding applications

Hauptmerkmale

  • Architecture
  • — Symmetrical 128-Kbyte blocks
  • — 256 Mbit (256 blocks)
  • — 128 Mbit (128 blocks)
  • — 64 Mbit (64 blocks)
  • — 32 Mbit (32 blocks)
  • Performance
  • — 75 ns Initial Access Speed (32,64,128 Mbit densities)
  • — 95 ns Initial Access Speed (256Mbit only)
  • — 25 ns 8-word and 4-word Asynchronous page-mode reads
  • — 32-Byte Write buffer; 4 µs per Byte Effective programming time
  • System Voltage
  • — VCC = 2.7 V to 3.6 V
  • — VCCQ = 2.7 V to 3.6 V
  • Packaging
  • — 56-Lead TSOP (32, 64, 128, 256 Mbit)
  • — 64-Ball Numonyx Easy BGA package (32, 64, 128 and 256 Mbit)
  • Security
  • — Enhanced security options for code protection
  • — 128-bit Protection Register: 64-bits Unique device identifier bits 64-bits User-programmable OTP bits
  • — Absolute protection with VPEN = GND
  • — Individual block locking
  • — Block erase/program lockout during power transitions
  • Software
  • — Program and erase suspend support
  • — Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
  • Quality and Reliability
  • — Operating temperature: -40 °C to +85 °C
  • — 100K Minimum erase cycles per block
  • — 0.13 µm ETOX™ VIII Process technology

Spezifikationen

Programmabe Not Verified Memory Type Non-Volatile
Memory Format FLASH Technology FLASH - NOR
Memory Size 256Mbit Memory Organization 32M x 8, 16M x 16
Memory Interface Parallel Clock Frequency -
Write Cycle Time - Word, Page 95ns Access Time 95 ns
Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount

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