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Siehe Technische Spezifikationen

PC28F256P33TFE +BOM

The PC28F256P33TFE is a 256M-bit NOR Flash memory IC, offering a 16M x 16 organization with a speedy 95ns access time, compatible with 2

Hersteller:

Alliance Memory, Inc.
Herstellerteil #:

PC28F256P33TFE
Datenblatt:

PC28F256P33TFE Datenblatt (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
HTS Code:

8542.32.00.51
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an PC28F256P33TFE

PC28F256P33TFE Allgemeine Beschreibung

The PC28F256P33TFE flash memory component, manufactured by Micron Technology, is an advanced solution for various electronic devices. With a capacity of 256Mb (32MB) and a 3.3-volt power supply, it delivers high performance with a maximum read speed of 133 MHz and an impressive program/erase cycle endurance of 100,000 cycles. Its compatibility with standard flash memory interfaces and support for synchronous and asynchronous operations make it a versatile choice for a wide range of applications, including solid-state drives, digital cameras, set-top boxes, and industrial automation

Hauptmerkmale

High performance
— 85/88 ns initial access
— 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst mode
— Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
— 1.8 V buffered programming at 7 µs/byte (Typ)
Architecture
— Multi-Level Cell Technology: Highest Density at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or bottom configuration
— 128-KByte main blocks
Voltage and Power
—VCC(core) voltage: 1.7 V – 2.0 V
—VCCQ (I/O) voltage: 1.7 V – 3.6 V
— Standby current: 55 µA (Typ) for 256-Mbit
— 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
1-Gbit in SCSP is –30 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology (130 nm)
Security
— One-Time Programmable Registers:
64 unique factory device identifier bits
64 user-programmable OTP bits
Additional 2048 user-programmable OTP bits
— Selectable OTP Space in Main Array:
4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
— Absolute write protection: VPP= VSS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Software
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
—Intel® Flash Data Integrator optimized
— Basic Command Set and Extended Command Set compatible
— Common Flash Interface capable
Density and Packaging
— 64/128/256-Mbit densities in 56-Lead TSOP package
— 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
— 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
— 16-bit wide data bus

Spezifikationen

Part Life Cycle Code	Obsolete	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.51
Access Time-Max	95 ns	Additional Feature	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE
Boot Block	TOP	Command User Interface	YES
Common Flash Interface	YES	Data Polling	NO
JESD-30 Code	R-PBGA-B64	JESD-609 Code	e1
Length	13 mm	Memory Density	268435456 bit
Memory IC Type	FLASH	Memory Width	16
Number of Functions	1	Number of Sectors/Size	4,255
Number of Terminals	64	Number of Words	16777216 words
Number of Words Code	16000000	Operating Mode	SYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	16MX16	Parallel/Serial	PARALLEL
Programming Voltage	3 V	Qualification Status	Not Qualified
Seated Height-Max	1.2 mm	Sector Size	16K,64K
Standby Current-Max	0.00021 A	Supply Current-Max	0.031 mA
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.3 V
Supply Voltage-Nom (Vsup)	3 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Finish	TIN SILVER COPPER	Terminal Form	BALL
Terminal Pitch	1 mm	Terminal Position	BOTTOM
Toggle Bit	NO	Type	NOR TYPE
Width	10 mm

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