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US6J11TR +BOM

Product US6J11TR is a P-channel, small signal MOSFET capable of delivering a current of -1.3A at a voltage of -12V

Hersteller:

ROHM Semiconductor
Herstellerteil #:

US6J11TR
Datenblatt:

US6J11TR Datenblatt (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

2 Channel

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

US6J11TR Allgemeine Beschreibung

Featuring P+P construction, the US6J11TR MOSFET is engineered to deliver superior functionality and versatility. Its utilization of micro-processing technologies ensures low ON-resistance, making it highly efficient for a wide array of applications. Whether it's for compact designs, high-power requirements, or complex configurations, this MOSFET is designed to meet the demands of the market, providing optimal solutions for different industry needs

Hauptmerkmale

Solid State SmartSpot Indicator

Time delay for motor starting and transformer inrush

300kA interrupting rating - self-certified, UL witnessed tests

Extremely current limiting for low peak let-thru current

Most current limiting UL class fuse

Small footprint requires less mounting space and allows smaller, more economical fuse blocks

Easy 2-to-1 selectivity for prevention of nuisance shutdowns

Unique Class J dimensions prevent replacement errors

High-visibility orange label gives instant recognition

Metal-embossed date and catalog number for traceability and lasting identification

Fiberglass body provides dimensional stability in harsh industrial settings

High-grade silica filler ensures fast arc quenching

Optional EI Indicator/Switch mount for AJT70 to 600 open fuse indication

Anwendung

SWITCHING

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	1.3 A	Rds On - Drain-Source Resistance	190 mOhms
Vgs - Gate-Source Voltage	- 10 V, + 10 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	2.4 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1 W
Channel Mode	Enhancement	Series	US6J11
Configuration	Dual	Fall Time	9 ns
Forward Transconductance - Min	1.4 S	Product Type	MOSFET
Rise Time	10 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 P-Channel
Typical Turn-Off Delay Time	30 ns	Typical Turn-On Delay Time	8 ns
Part # Aliases	US6J11	Unit Weight	0.000265 oz

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..