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Alle Ergebnisse für "SI2" ( 272 )
Beliebte Hersteller
- Artikelnummer
- Hersteller
- Beschreibung
- Datenblatt
- Betrieb
- SI2323CDS-T1-GE3
- Vishay
- MOSFET with P-Channel and 20 V Drain-Source
- Datenblatt
- SI2300DS-T1-GE3
- VISHAY
- Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
- Datenblatt
- SI2302DDS-T1-GE3
- VISHAY
- MOSFET 20V Vds 8V Vgs SOT-23
- Datenblatt
- SI2342DS-T1-GE3
- Vishay
- The SI2342DS-T1-GE3 is a MOSFET with N-channel configuration
- Datenblatt
- SI2365EDS-T1-GE3
- Vishay
- Low Voltage 4.5V 1V at 250uA
- Datenblatt
- SI2323DDS-T1-GE3
- VISHAY
- VISHAY SI2323DDS-T1-GE3 Power MOSFET P Channel 20V 5.3A 0.032 ohm SOT-23 Surface Mount
- Datenblatt
- SI2333DDS-T1-GE3
- Vishay
- P Channel SOT-23 MOSFET with a voltage rating of 12V and a current handling capability of 6A at 28mΩ resistance when operated at 4.5V
- Datenblatt
- SI2369DS-T1-GE3
- Vishay
- Description: MOSFET with a maximum drain-source voltage of -30V and a maximum gate-source voltage of 20V, packaged in SOT-23
- Datenblatt
- SI2303CDS-T1-GE3
- VISHAY
- Single P-Channel 30 V 0.19 Ohm Surface Mount Power MosFet - SOT-23-3
- Datenblatt
- SI2393DS-T1-GE3
- VISHAY
- Transistor MOSFET P-CH 30V 7.5A 3-Pin SOT-23 T/R
- Datenblatt
- SI2307CDS-T1-E3
- VISHAY
- MOSFET -30V Vds 20V Vgs SOT-23
- Datenblatt
- SI2307CDS-T1-GE3
- Vishay
- -30V drain-source voltage MOSFET with 20V gate-source voltage in SOT-23 package
- Datenblatt
- SI2309CDS-T1-GE3
- Vishay
- ROHS-certified SOT-23 MOSFETs
- Datenblatt
- SI2319DS-T1-GE3
- Vishay
- MOSFET with a voltage rating of 40V, current capacity of 3.0A, power dissipation of 1.25W, and a low on-resistance of 82mohm at 10V
- Datenblatt
- SI2325DS-T1-E3
- VISHAY
- P-Channel Transistor with 150-Voltage Capacity
- Datenblatt
- SI2315BDS-T1-E3
- VISHAY
- Features: SI2315BDS-T1-E3 is a P-channel MOSFET crafted for applications demanding a maximum voltage of 12V and a current rating of 3A
- Datenblatt
- SI2323DS-T1-E3
- Vishay
- Product SI2323DS-T1-E3 is a P-channel MOSFET in SOT-23 package
- Datenblatt
- SI2302DS
- VISHAY
- NXP SI2302DS N-channel MOSFET Transistor: 2.5 Amps, 20 Volts, TO-236AB Package
- Datenblatt
- SI2300
- VISHAY
- Small Signal Field-Effect Transistor, 4.5A I(D), 20V,
- Datenblatt
- SI2338DS-T1-GE3
- VISHAY
- N-Channel 30 V 28 mOhm 13 nC Surface Mount Power Mosfet - SOT-23-3
- Datenblatt