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Siehe Technische Spezifikationen

SI2342DS-T1-GE3 +BOM

The SI2342DS-T1-GE3 is a MOSFET with N-channel configuration

Hersteller:

Vishay
Herstellerteil #:

SI2342DS-T1-GE3
Datenblatt:

SI2342DS-T1-GE3 Datenblatt (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an SI2342DS-T1-GE3

SI2342DS-T1-GE3 Allgemeine Beschreibung

The SI2342DS-T1-GE3 MOSFET is a high-performance N-channel transistor with an impressive 6A continuous drain current capability. This makes it ideal for power management applications in a variety of electronic devices. With a drain-source voltage rating of 8V and an on-resistance of just 0.014ohm, this MOSFET offers excellent efficiency and reliability. The threshold voltage of 800mV ensures swift and precise operation, while the SOT-23 transistor case style allows for easy integration into existing circuitry. Operating at a maximum temperature of 150°C, this device can withstand demanding operating conditions. The TrenchFET Series designation signifies a superior level of quality and performance, making it a top choice for automotive and industrial applications. With no SVHC present, this MOSFET meets stringent environmental standards

Hauptmerkmale

High voltage tolerance
Soft start capability
Fault-tolerant design

Anwendung

Load Switches for Low Voltage Gate Drive |Low Voltage Operating Circuits - Gate Drive 1.2 V to 5 V

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	8 V
Id - Continuous Drain Current	6 A	Rds On - Drain-Source Resistance	17 mOhms
Vgs - Gate-Source Voltage	- 5 V, + 5 V	Vgs th - Gate-Source Threshold Voltage	800 mV
Qg - Gate Charge	6 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	25 ns	Product Type	MOSFET
Rise Time	14 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	65 ns	Typical Turn-On Delay Time	6 ns
Part # Aliases	SI2342DS-T1-BE3	Unit Weight	0.000282 oz

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..