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Siehe Technische Spezifikationen

CY62167G30-45ZXI +BOM

Compact, high-performance static RAM

Hersteller:

INFINEON
Herstellerteil #:

CY62167G30-45ZXI
Datenblatt:

CY62167G30-45ZXI Datenblatt (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
Access Time-Max:

45 ns
Alternate Memory Width:

8

CY62167G30-45ZXI Allgemeine Beschreibung

The CY62167G30-45ZXI is a cutting-edge SRAM chip that offers high performance and low power consumption, making it an ideal choice for a wide range of electronic devices. With a capacity of 16 megabits and a speed of 45 nanoseconds, this chip delivers rapid and dependable data access, meeting the demands of modern applications such as mobile phones, smart watches, and tablets. Its low standby current consumption of 1 microampere significantly extends the battery life of devices, while its wide operating voltage range ensures compatibility with various power sources. Furthermore, its compact footprint and low profile make it perfect for space-constrained applications

Hauptmerkmale

Very high speed: 55 ns
Wide voltage range: 1.65V to 2.25V
Ultra low standby power
❐ Typical standby current: 1.5 μA
❐ Maximum standby current: 12 μA
Ultra low active power
❐ Typical active current: 2.2 mA at f = 1 MHz
Easy memory expansion with CE1, CE2, and OE features
Automatic power down when deselected
CMOS for optimum speed and power
Offered in Pb-free 48-ball VFBGA packages

Spezifikationen

Part Life Cycle Code	Active	Reach Compliance Code	compliant
Access Time-Max	45 ns	Alternate Memory Width	8
I/O Type	COMMON	JESD-30 Code	R-PDSO-G48
JESD-609 Code	e3	Length	18.4 mm
Memory Density	16777216 bit	Memory IC Type	STANDARD SRAM
Memory Width	16	Moisture Sensitivity Level	3
Number of Functions	1	Number of Ports	1
Number of Terminals	48	Number of Words	1048576 words
Number of Words Code	1000000	Operating Mode	ASYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	1MX16	Output Characteristics	3-STATE
Output Enable	YES	Parallel/Serial	PARALLEL
Seated Height-Max	1.2 mm	Standby Current-Max	0.000016 A
Standby Voltage-Min	1 V	Supply Current-Max	0.036 mA
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.2 V
Supply Voltage-Nom (Vsup)	3 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Pitch	0.5 mm	Terminal Position	DUAL
Width	12 mm	Product Category	SRAM
Memory Size	16 Mbit	Access Time	45 ns
Maximum Clock Frequency	-	Interface Type	Parallel
Supply Voltage - Max	3.6 V	Supply Voltage - Min	2.2 V
Supply Current - Max	36 mA	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C	Mounting Style	SMD/SMT
Memory Type	SDR	Moisture Sensitive	Yes
Product Type	SRAM	Series	CY62167
Factory Pack Quantity	960	Subcategory	Memory & Data Storage
Unit Weight	0.385568 oz	Programmabe	Not Verified
Memory Format	SRAM	Memory Organization	2M x 8, 1M x 16
Memory Interface	Parallel	Write Cycle Time - Word, Page	45ns
Voltage - Supply	2.2V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount	Base Product Number	CY62167

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