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Siehe Technische Spezifikationen

CY7C1019DV33-10ZSXI +BOM

1Mb 10ns 3.3V 128Kx8 Fast Async SRAM

Hersteller:

Cypress Semiconductor
Herstellerteil #:

CY7C1019DV33-10ZSXI
Datenblatt:

CY7C1019DV33-10ZSXI Datenblatt (PDF)
Series:

CY7C1019DV33
Type:

Asynchronous
Packaging:

Tray Alternate Packaging
:

100 MHz
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an CY7C1019DV33-10ZSXI

CY7C1019DV33-10ZSXI Allgemeine Beschreibung

Cypress Semiconductor's CY7C1019DV33-10ZSXI is a top-of-the-line synchronous SRAM chip that excels in high-speed, low-voltage performance. Boasting a 1 Megabit capacity and operating at a speed of 10 nanoseconds, this chip is well-suited for applications requiring rapid and reliable data access. Its low 3.3V voltage requirement not only minimizes power consumption but also reduces heat generation, making it a preferred choice for portable devices and low-power applications. The chip's synchronous interface facilitates synchronized data transfers with the system clock, improving overall system efficiency. Its wide operating temperature range of -40°C to 85°C makes it adaptable to various environments, enhancing its usability. Additionally, the 32-pin small-outline integrated circuit (SOIC) package simplifies integration into existing circuit designs, streamlining the implementation process. In summary, the CY7C1019DV33-10ZSXI offers high-speed, low-voltage, and dependable performance, making it an optimal solution for a wide array of electronic applications

Hauptmerkmale

Pin and function-compatible with CY7C1019CV33
High speed - 10ns
Low active speed
Low CMOS standby power
2V Data retention
Automatic power-down when deselected
CMOS for optimum speed/power
Center power/ground pinout
Easy memory expansion with CE and OE

Anwendung

Computers & Computer Peripherals
Industrial
Portable Devices

Spezifikationen

Product Category	Memory ICs	Series	CY7C1019DV33
Type	Asynchronous	Packaging	Tray Alternate Packaging
	100 MHz	Mounting-Style	-40°C ~ 85°C (TA)
Operating-Temperature	3 V ~ 3.6 V	Interface	SRAM - Asynchronous
Voltage-Supply	10ns	Memory Capacity	+ 85 C
Memory-Type	128 k x 8	Speed	3 V
Data-Rate	TSOP-32

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..