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Siehe Technische Spezifikationen

CY7C1512KV18-250BZXC +BOM

CY7C1512KV18-250BZXC is a 72 Mb (4 M x 18) QDR® II SRAM product with a voltage range of 1.7 - 1.9 V in a FBGA-165 package

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

CY7C1512KV18-250BZXC
Datenblatt:

CY7C1512KV18-250BZXC Datenblatt (PDF)
Memory Size:

72 Mbit
Organization:

4 M x 18
Maximum Clock Frequency:

250 MHz
Interface Type:

Parallel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an CY7C1512KV18-250BZXC

CY7C1512KV18-250BZXC Allgemeine Beschreibung

Cypress Semiconductor's CY7C1512KV18-250BZXC is a high-density DDR2 SRAM device designed to meet the demands of modern high-speed networking, telecommunications, and industrial applications. With its 256 megabit density and maximum operating frequency of 250 MHz, this device delivers exceptional performance and reliability. It offers a synchronous interface with a data clock rate of up to 500 MHz, and its support for both sequential and interleave burst modes makes it highly adaptable to various application requirements. The device's on-chip error correction code (ECC) ensures improved data integrity, while its programmable wrap sequence support and adjustable output impedance further optimize data transfer and signal integrity. Furthermore, the CY7C1512KV18-250BZXC features a deep power-down mode, effectively reducing power consumption during standby periods. Packaged in a 165-ball BGA format, this DDR2 SRAM device provides a compact and reliable solution for system integration

Spezifikationen

Product Category:	SRAM	Memory Size:	72 Mbit
Organization:	4 M x 18	Access Time:	-
Maximum Clock Frequency:	250 MHz	Interface Type:	Parallel
Supply Voltage - Max:	1.9 V	Supply Voltage - Min:	1.7 V
Supply Current - Max:	650 mA	Minimum Operating Temperature:	0 C
Maximum Operating Temperature:	+ 70 C	Mounting Style:	SMD/SMT
Packaging:	Tray	Memory Type:	Volatile
Series:	CY7C1512KV18	Type:	Synchronous
Moisture Sensitive:	Yes	Product Type:	SRAM
Factory Pack Quantity:	136	Subcategory:	Memory & Data Storage
Tags	CY7C1512KV18-250BZX, CY7C1512KV18-25, CY7C1512KV18-2, CY7C1512K, CY7C1512, CY7C151, CY7C15, CY7C1, CY7C, CY7	RHoS	yes
PBFree	yes	feature-organization
feature-process-technology	90nm, CMOS	feature-maximum-access-time-ns	0.45
feature-minimum-operating-supply-voltage-v	1.7	feature-maximum-operating-supply-voltage-v	1.9
feature-maximum-operating-current-ma	650	feature-packaging	Tray
feature-rad-hard		feature-pin-count	165
feature-cecc-qualified	No	feature-esd-protection
feature-military	No	feature-aec-qualified	No
feature-aec-qualified-number		feature-eccn-code	3A991.b.2.b
feature-svhc	No	feature-svhc-exceeds-threshold	No

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