Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

DTC114ECAHZGT116 +BOM

100mA Current Rating

DTC114ECAHZGT116 Allgemeine Beschreibung

Moreover, the DTC114ECAHZGT116 features a high current transfer ratio and fast switching speeds, making it suitable for high-frequency applications where quick and precise signal processing is crucial. This level of performance and reliability ensures that the digital transistor delivers consistent and dependable operation, even in demanding operating conditions

ROHM Semiconductor Inventar

Hauptmerkmale

  • The maximum collector current is 100 mA.
  • The maximum collector-emitter voltage is 50 V.
  • The maximum power dissipation is 200 mW.
  • The transistor is housed in a small surface-mount package called SOT-23.

Anwendung

  • Switching circuits: The transistor can be used to turn on or off other components in an electronic circuit.
  • Amplifiers: The transistor can be used to amplify small signals to larger ones.
  • Voltage regulators: The transistor can be used as a part of a voltage regulator circuit to maintain a constant voltage output.

Spezifikationen

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single, Pre-Biased Bipolar Transistors Series Automotive, AEC-Q101
Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100 mA
Resistor - Base (R1) 10 kOhms Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) - Frequency - Transition 250 MHz
Power - Max 350 mW Mounting Type Surface Mount
Base Product Number DTC114 Product Category Bipolar Transistors - Pre-Biased
Configuration Single Transistor Polarity NPN
Typical Input Resistor 10 kOhms Typical Resistor Ratio 1
Mounting Style SMD/SMT DC Collector/Base Gain hfe Min 30
Continuous Collector Current 100 mA Pd - Power Dissipation 200 mW
Maximum Operating Temperature + 150 C Output Voltage 100 mV
Product Type BJTs - Bipolar Transistors - Pre-Biased Qualification AEC-Q101
Factory Pack Quantity 3000 Subcategory Transistors
Part # Aliases DTC114ECAHZG

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

payment Zahlung

Bezahlverfahren

hsbc
TT/Überweisung
paypal
Paypal
wu
Western Union
mg
Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]
Versand Versand & Verpackung

Versandart

fedex
Fedex
ups
UPS
dhl
DHL
tnt
NTN
Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..

Garantie Garantie

Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.

Bewertungen und Rezensionen

Mehr
C
C**b 02.01.2023

Everything perfect already install them and works perfectly

7

Rezensionen

You need to log in to reply. Anmelden | Melden Sie sich an

DTC114ECAHZGT116 Datenblatt PDF

Preliminary Specification DTC114ECAHZGT116 PDF Herunterladen

DTC114ECAHZGT116 PDF Vorschau