Bezahlverfahren
IPD65R380E6ATMA1 +BOM
MOSFET LOW POWER_LEGACY
TO-252-3-
Hersteller:
-
Herstellerteil #:
IPD65R380E6ATMA1
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Datenblatt:
-
Series:
CoolMOS™ E6
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
650 V
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EDA/CAD Modelle:
Verfügbarkeit: 4220 Stck
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
IPD65R380E6ATMA1 Allgemeine Beschreibung
N-Channel 650 V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3
Hauptmerkmale
- Easy control of switching behavior
- Very high commutation ruggedness
- Extremely low losses due to very low Figure of Merit (R
- DS(ON)
- g
- oss
- Easy to use
- Better light load efficiency compared to C3
- Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness
- Better price performance in comparison to previous CoolMOS generations
- More efficient, more compact, lighter and cooler
- Improved power density
- Improved reliability
- General purpose part can be used in both soft and hard switching topologies
- Better light load effciency
- Improved effciency in hard switching applications
- Improved ease-of-use
- Reduces possible ringing due to pcb layout and package parasitic effects
Spezifikationen
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | CoolMOS™ E6 |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V | Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 380mOhm @ 3.2A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 320µA | Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V |
FET Feature | - | Power Dissipation (Max) | 83W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IPD65R380 | RHoS | yes |
PBFree | yes | HalogenFree | yes |
Product Category | MOSFET | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 650 V | Id - Continuous Drain Current | 10.6 A |
Rds On - Drain-Source Resistance | 340 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V | Qg - Gate Charge | 39 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 83 W | Channel Mode | Enhancement |
Tradename | CoolMOS | Configuration | Single |
Fall Time | 8 ns | Height | 2.3 mm |
Length | 6.5 mm | Product Type | MOSFET |
Rise Time | 7 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 57 ns | Typical Turn-On Delay Time | 10 ns |
Width | 6.22 mm | Part # Aliases | IPD65R380E6 SP001117736 |
Unit Weight | 0.011640 oz |
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IPD65R380E6ATMA1 Datenblatt PDF
IPD65R380E6ATMA1 PDF Vorschau
In Stock: 4.220
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $1,421 | $1,42 |
10+ | $1,193 | $11,93 |
30+ | $1,069 | $32,07 |
100+ | $0,926 | $92,60 |
500+ | $0,865 | $432,50 |
1000+ | $0,836 | $836,00 |
Die unten angegebenen Preise dienen nur als Referenz.
Alle Stücklisten (BOM) können per E-Mail gesendet werden an [email protected], oder füllen Sie das untenstehende Formular aus, um ein Angebot für IPD65R380E6ATMA1 zu erstellen, garantierte Angebote zurück innerhalb 12 Std.