Bezahlverfahren
IXBH10N300HV +BOM
IGBT 3000 V 34 A 180 W Through Hole TO-247HV (IXBH)
TO-263HV-
Hersteller:
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Herstellerteil #:
IXBH10N300HV
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Datenblatt:
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Technology:
Si
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Mounting Style:
Through Hole
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
3 kV
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EDA/CAD Modelle:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IXBH10N300HV, guaranteed quotes back within 12hr.
Verfügbarkeit: 7072 Stck
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
IXBH10N300HV Allgemeine Beschreibung
The IXBH10N300HV is a game-changing BiMOSFET product that combines the strengths of MOSFETs and IGBTs. Utilizing non-epitaxial construction and state-of-the-art fabrication processes, these high voltage devices have quickly become a success in the industry. They are well-suited for parallel operation, with both the saturation voltage and the forward voltage drop of the intrinsic diode exhibiting a positive voltage temperature coefficient. Additionally, the built-in body diode acts as a protection diode, offering an alternative path for the inductive load current during device turn-off to prevent damage from high Ldi/dt voltage transients. The IXBH10N300HV is an ideal choice for a wide range of applications, thanks to its innovative design and superior performance
Hauptmerkmale
- Real-time monitoring capabilities
- Advanced alarm management
- Simplified troubleshooting process
- Increased system flexibility
Anwendung
- Power systems
- Electronic devices
- Voltage regulators
Spezifikationen
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 3 kV | Collector-Emitter Saturation Voltage | 2.8 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 34 A |
Pd - Power Dissipation | 180 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Continuous Collector Current Ic Max | 88 A |
Gate-Emitter Leakage Current | 100 nA | Product Type | IGBT Transistors |
Factory Pack Quantity | 30 | Subcategory | IGBTs |
Unit Weight | 0.211644 oz |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
365-Tage-Produkt
Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
In Stock: 7.072
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $166,534 | $166,53 |
210+ | $66,450 | $13.954,50 |
510+ | $64,228 | $32.756,28 |
990+ | $63,132 | $62.500,68 |
Die unten angegebenen Preise dienen nur als Referenz.
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