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Siehe Technische Spezifikationen

JANS2N2222AUB +BOM

Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Surface Mount UB

Hersteller:

MICROCHIP
Herstellerteil #:

JANS2N2222AUB
Datenblatt:

JANS2N2222AUB Datenblatt (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an JANS2N2222AUB

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

JANS2N2222AUB Allgemeine Beschreibung

Engineered to meet rigorous military standards for performance and reliability, the JANS2N2222AUB is an exceptional NPN bipolar junction transistor (BJT) designed for military and aerospace applications. Featuring a maximum collector current (Ic) of 800mA and a maximum power dissipation (Pd) of 500mW, this high-reliability transistor is well-equipped for a wide range of low-power switching and amplification tasks. Its DC current gain (hFE) of 100 minimum at 150mA ensures stable and consistent performance in various circuit configurations, making it a dependable choice for demanding applications. Housed in a hermetically sealed TO-18 metal can package, the JANS2N2222AUB offers enhanced durability in harsh environments and operates reliably over a wide temperature range from -65°C to 200°C, making it the perfect solution for extreme conditions

Spezifikationen

Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	16 Weeks	Collector Current-Max (IC)	0.8 A
Collector-Emitter Voltage-Max	50 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	30	JESD-30 Code	R-CDSO-N3
Number of Elements	1	Number of Terminals	3
Operating Temperature-Max	200 °C	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	NPN	Power Dissipation-Max (Abs)	0.5 W
Qualification Status	Qualified	Reference Standard	MIL-19500/255
Surface Mount	YES	Terminal Form	NO LEAD
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	250 MHz	Series	Military, MIL-PRF-19500/255
Transistor Type	NPN	Current - Collector (Ic) (Max)	800 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Current - Collector Cutoff (Max)	50nA	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Power - Max	500 mW	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Surface Mount

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