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Siehe Technische Spezifikationen

LND150N3-G

N-Channel 500 V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3

Hersteller:

Microchip Technology, Inc
Herstellerteil #:

LND150N3-G
Datenblatt:

LND150N3-G Datenblatt (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

500 V
Current - Continuous Drain (Id) @ 25°C:

30mA (Tj)
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an LND150N3-G

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

LND150N3-G Allgemeine Beschreibung

The LND150N3-G is an N-channel enhancement-mode MOSFET designed for switching applications and amplification of electronic signals. Enhancement-mode MOSFETs require a positive voltage at the gate terminal to allow current to flow between the source and drain terminals.

Hauptmerkmale

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low CISS
ESD gate protection

Microchip Technology, Inc Originalbestand

Anwendung

Switching Circuits: MOSFETs serve as electronic switches in applications such as power supplies, motor control, and digital logic circuits.
Amplifiers: They can be used as amplification devices in analog and audio amplifier circuits.
Voltage Regulation: MOSFETs are used in voltage regulation and voltage level shifting applications.
Signal Processing: In analog and digital signal processing circuits, MOSFETs are employed for signal amplification and switching.
LED Drivers: Used in LED driver circuits for controlling the brightness of LEDs in various lighting applications.
Power Inverters: In power inverter circuits for converting DC power to AC power in applications like solar inverters and uninterruptible power supplies (UPS).
Motor Control: Employed in motor control circuits for applications such as robotics, drones, and industrial automation.
Power Management: Used for various power management functions, including load switching and battery management.
High-Frequency Applications: In radio frequency (RF) and microwave circuits for switching and signal amplification.

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	-
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V	Current - Continuous Drain (Id) @ 25°C	30mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	0V	Rds On (Max) @ Id, Vgs	1000Ohm @ 500µA, 0V
Vgs(th) (Max) @ Id	-	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10 pF @ 25 V	FET Feature	Depletion Mode
Power Dissipation (Max)	740mW (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Base Product Number	LND150

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