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Siehe Technische Spezifikationen

PC28F00AM29EWLA +BOM

Parallel interface for high-speed data transfer

Hersteller:

Micron Technology Inc.
Herstellerteil #:

PC28F00AM29EWLA
Datenblatt:

PC28F00AM29EWLA Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

64
Reach Compliance Code:

compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an PC28F00AM29EWLA

PC28F00AM29EWLA Allgemeine Beschreibung

Moreover, the PC28F00AM29EWLA is equipped with advanced error correction and wear-leveling mechanisms, further enhancing its reliability and longevity. These features make it well-suited for a wide range of applications, including data storage, firmware storage, and code execution in FPGA-based systems

Hauptmerkmale

High-Performance Read, Program and Erase
– 96 ns initial read access
– 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
– 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
– 8-, 16-, and continuous-word synchronous-burst Reads
– Programmable WAIT configuration
– Customer-configurable output driver impedance
– Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
– Block Erase: 0.9 s per block (typ)
– 20 μs (typ) program/erase suspend
Architecture
– 16-bit wide data bus
– Multi-Level Cell Technology
– Symmetrically-Blocked Array Architecture
– 256-Kbyte Erase Blocks
– 1-Gbit device: Eight 128-Mbit partitions
– 512-Mbit device: Eight 64-Mbit partitions
– 256-Mbit device: Eight 32-Mbit partitions
– 128-Mbit device: Eight 16-Mbit partitions
– Read-While-Program and Read-While-Erase
– Status Register for partition/device status
– Blank Check feature
Quality and Reliability
– Expanded temperature: –30 °C to +85 °C
– Minimum 100,000 erase cycles per block
– 65nm Process Technology
Power
– Core voltage: 1.7 V - 2.0 V
– I/O voltage: 1.7 V - 2.0 V
– Standby current: 60 μA (typ) for 512-Mbit, 65 nm
– Deep Power-Down mode: 2 μA (typ)
– Automatic Power Savings mode
– 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
Software
– Micron® Flash data integrator (FDI) optimized
– Basic command set (BCS) and extended command set (ECS) compatible
– Common Flash interface (CFI) capable
Security
– One-time programmable (OTP) space
64 unique factory device identifier bits
2112 user-programmable OTP bits
– Absolute write protection: VPP = GND
– Power-transition erase/program lockout
– Individual zero latency block locking
– Individual block lock-down
Density and packaging
– 128Mb, 256Mb, 512Mbit, and 1-Gbit
– Address-data multiplexed and non-multiplexed interfaces
– 64-Ball Easy BGA

Spezifikationen

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Pin Count	64	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.51
Access Time-Max	100 ns	Alternate Memory Width	8
Command User Interface	YES	Common Flash Interface	YES
Data Polling	YES	JESD-30 Code	R-PBGA-B64
JESD-609 Code	e1	Length	13 mm
Memory Density	1073741824 bit	Memory IC Type	FLASH
Memory Width	16	Number of Functions	1
Number of Sectors/Size	1K	Number of Terminals	64
Number of Words	67108864 words	Number of Words Code	64000000
Operating Mode	ASYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	64MX16
Page Size	16/32 words	Parallel/Serial	PARALLEL
Peak Reflow Temperature (Cel)	260	Programming Voltage	3 V
Qualification Status	Not Qualified	Ready/Busy	YES
Seated Height-Max	1.4 mm	Sector Size	128K
Standby Current-Max	0.00024 A	Supply Current-Max	0.031 mA
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.7 V
Supply Voltage-Nom (Vsup)	3 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)	Terminal Form	BALL
Terminal Pitch	1 mm	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	30	Toggle Bit	YES
Type	NOR TYPE	Width	11 mm

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