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PC28F128P33BF60D +BOM

128Mb Legacy NOR Flash with 64-ball Easy BGA

Hersteller:

Micron Technology Inc.
Herstellerteil #:

PC28F128P33BF60D
Datenblatt:

PC28F128P33BF60D Datenblatt (PDF)
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
Memory Size:

128Mbit
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an PC28F128P33BF60D

PC28F128P33BF60D Allgemeine Beschreibung

The PC28F128P33BF60D is an advanced 128Mb parallel NOR Flash memory device designed for a wide range of applications. With a voltage range of 1.8V to 3.6V, it offers versatility and flexibility in various operating environments. The device's multiple blocks and sectors allow for customizable data storage, catering to the diverse needs of embedded systems, automotive electronics, and industrial equipment. Its 33MHz clock frequency and 60ns random access time ensure efficient read and program operations, making it a reliable choice for high-performance applications. The parallel interface simplifies integration with host systems, providing seamless connectivity and communication. The device's durability and robustness make it well-suited for challenging environments that demand non-volatile storage with extended endurance and data retention. Furthermore, its support for advanced features such as hardware data protection and sector locking enhances security and data integrity, adding an extra layer of reliability to its performance

Hauptmerkmale

High performance
— 85/88 ns initial access
— 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst mode
— Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
— 1.8 V buffered programming at 7 µs/byte (Typ)
Architecture
— Multi-Level Cell Technology: Highest Density at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or bottom configuration
— 128-KByte main blocks
Voltage and Power
—VCC(core) voltage: 1.7 V – 2.0 V
—VCCQ (I/O) voltage: 1.7 V – 3.6 V
— Standby current: 55 µA (Typ) for 256-Mbit
— 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
1-Gbit in SCSP is –30 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology (130 nm)
Security
— One-Time Programmable Registers:
64 unique factory device identifier bits
64 user-programmable OTP bits
Additional 2048 user-programmable OTP bits
— Selectable OTP Space in Main Array:
4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
— Absolute write protection: VPP= VSS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Software
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
—Intel® Flash Data Integrator optimized
— Basic Command Set and Extended Command Set compatible
— Common Flash Interface capable
Density and Packaging
— 64/128/256-Mbit densities in 56-Lead TSOP package
— 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
— 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
— 16-bit wide data bus

Spezifikationen

Programmabe	-	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	128Mbit	Memory Organization	8M x 16
Memory Interface	Parallel	Clock Frequency	52 MHz
Write Cycle Time - Word, Page	60ns	Access Time	60 ns
Voltage - Supply	2.3V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount

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