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Siehe Technische Spezifikationen

PC28F512P30EFA +BOM

Flash memory PC28F512P30EFA

Hersteller:

Alliance Memory, Inc.
Herstellerteil #:

PC28F512P30EFA
Datenblatt:

PC28F512P30EFA Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

64
Reach Compliance Code:

compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an PC28F512P30EFA

PC28F512P30EFA Allgemeine Beschreibung

Engineered with a parallel interface and operating at a voltage of 3.3V, the PC28F512P30EFA offers seamless integration into a wide range of computing devices. Its 2KB page size and support for up to 100,000 program/erase cycles make it a reliable and durable solution for long-term use. Housed in a compact 64-pin TSOP package, this module provides a robust form factor that simplifies integration and ensures its resilience in electronic devices

Hauptmerkmale

High-Performance Read, Program and Erase
– 96 ns initial read access
– 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
– 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
– 8-, 16-, and continuous-word synchronous-burst Reads
– Programmable WAIT configuration
– Customer-configurable output driver impedance
– Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
– Block Erase: 0.9 s per block (typ)
– 20 μs (typ) program/erase suspend
Architecture
– 16-bit wide data bus
– Multi-Level Cell Technology
– Symmetrically-Blocked Array Architecture
– 256-Kbyte Erase Blocks
– 1-Gbit device: Eight 128-Mbit partitions
– 512-Mbit device: Eight 64-Mbit partitions
– 256-Mbit device: Eight 32-Mbit partitions
– 128-Mbit device: Eight 16-Mbit partitions
– Read-While-Program and Read-While-Erase
– Status Register for partition/device status
– Blank Check feature
Quality and Reliability
– Expanded temperature: –30 °C to +85 °C
– Minimum 100,000 erase cycles per block
– 65nm Process Technology
Power
– Core voltage: 1.7 V - 2.0 V
– I/O voltage: 1.7 V - 2.0 V
– Standby current: 60 μA (typ) for 512-Mbit, 65 nm
– Deep Power-Down mode: 2 μA (typ)
– Automatic Power Savings mode
– 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
Software
– Micron® Flash data integrator (FDI) optimized
– Basic command set (BCS) and extended command set (ECS) compatible
– Common Flash interface (CFI) capable
Security
– One-time programmable (OTP) space
64 unique factory device identifier bits
2112 user-programmable OTP bits
– Absolute write protection: VPP = GND
– Power-transition erase/program lockout
– Individual zero latency block locking
– Individual block lock-down
Density and packaging
– 128Mb, 256Mb, 512Mbit, and 1-Gbit
– Address-data multiplexed and non-multiplexed interfaces
– 64-Ball Easy BGA

Spezifikationen

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Pin Count	64	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.51
Access Time-Max	100 ns	Additional Feature	SYMMETRICAL BLOCKS
Command User Interface	YES	Common Flash Interface	YES
Data Polling	NO	JESD-30 Code	R-PBGA-B64
JESD-609 Code	e1	Length	10 mm
Memory Density	536870912 bit	Memory IC Type	FLASH
Memory Width	16	Number of Functions	1
Number of Sectors/Size	512	Number of Terminals	64
Number of Words	33554432 words	Number of Words Code	32000000
Operating Mode	SYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	32MX16
Page Size	16 words	Parallel/Serial	PARALLEL
Peak Reflow Temperature (Cel)	260	Programming Voltage	3 V
Qualification Status	Not Qualified	Seated Height-Max	1.2 mm
Sector Size	64K	Standby Current-Max	0.000225 A
Supply Current-Max	0.031 mA	Supply Voltage-Max (Vsup)	2 V
Supply Voltage-Min (Vsup)	1.7 V	Supply Voltage-Nom (Vsup)	1.8 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Finish	TIN SILVER COPPER
Terminal Form	BALL	Terminal Pitch	1 mm
Terminal Position	BOTTOM	Time@Peak Reflow Temperature-Max (s)	30
Toggle Bit	NO	Type	NOR TYPE
Width	8 mm

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Verpackung

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