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PHPT61003NYX +BOM

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, MO-235, Plastic/Epoxy, 4 Pin

Hersteller:

Nexperia Semiconductor (NXP)
Herstellerteil #:

PHPT61003NYX
Datenblatt:

PHPT61003NYX Datenblatt (PDF)
Series:

Automotive, AEC-Q100
Transistor Type:

NPN
Current - Collector (Ic) (Max):

3 A
Voltage - Collector Emitter Breakdown (Max):

100 V
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an PHPT61003NYX

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

PHPT61003NYX Allgemeine Beschreibung

This transistor boasts a power dissipation (Pd) rating of 25W, allowing it to handle moderate power levels without overheating. The DC collector current of 3A and DC current gain (hFE) of 10hFE make it suitable for moderate current requirements, while the SOT-669 case style with 5 pins provides easy installation and secure connection in your circuit

Hauptmerkmale

High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified

Anwendung

Renewable energy sources
Grid-connected systems
High power applications

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	Automotive, AEC-Q100
Transistor Type	NPN	Current - Collector (Ic) (Max)	3 A
Voltage - Collector Emitter Breakdown (Max)	100 V	Vce Saturation (Max) @ Ib, Ic	330mV @ 300mA, 3A
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 10V
Power - Max	1.25 W	Frequency - Transition	140MHz
Operating Temperature	175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	PHPT61003	Product Category	Bipolar Transistors - BJT
Mounting Style	SMD/SMT	Transistor Polarity	NPN
Configuration	Single	Collector- Emitter Voltage VCEO Max	100 V
Collector- Base Voltage VCBO	100 V	Emitter- Base Voltage VEBO	7 V
Collector-Emitter Saturation Voltage	225 mV	Maximum DC Collector Current	3 A
Pd - Power Dissipation	25 W	Gain Bandwidth Product fT	140 MHz
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Qualification	AEC-Q101	Continuous Collector Current	3 A
DC Collector/Base Gain hfe Min	150	DC Current Gain hFE Max	250
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	1500
Subcategory	Transistors	Technology	Si
Part # Aliases	934067881115	Unit Weight	0.002335 oz

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