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20 V, 800 mA dual N-channel Trench MOSFET
SOT-666-6Hersteller:
Nexperia USA Inc.
Herstellerteil #:
PMDT290UNE,115
Datenblatt:
Part Life Cycle Code:
Active
Pin Count:
6
Reach Compliance Code:
compliant
Application:
SWITCHING
EDA/CAD Modelle:
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The PMDT290UNE is a game-changer in the world of FETs, offering unparalleled performance and versatility in a compact package. Featuring dual N-channel enhancement mode and Trench MOSFET technology, this small yet mighty device delivers exceptional power and efficiency for a wide range of applications. Whether you're designing a new circuit or upgrading an existing system, the PMDT290UNE is the perfect choice for reliable and precise control
Source Content uid | PMDT290UNE,115 | Part Life Cycle Code | Active |
Pin Count | 6 | Reach Compliance Code | compliant |
Application | SWITCHING | Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-F6 |
Moisture Sensitivity Level | 1 | Number of Elements | 2 |
Number of Terminals | 6 | Operating Mode | ENHANCEMENT MODE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Surface Mount | YES | Terminal Finish | TIN |
Terminal Form | FLAT | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Element Material | SILICON |
Series | TrenchMOS™ | Technology | MOSFET (Metal Oxide) |
FET Feature | Logic Level Gate | Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 800mA | Rds On (Max) @ Id, Vgs | 380mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 0.68nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 83pF @ 10V | Power - Max | 500mW |
Operating Temperature | -55°C ~ 150°C (TJ) | Grade | Automotive |
Qualification | AEC-Q101 | Mounting Type | Surface Mount |
Base Product Number | PMDT290 |
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