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Siehe Technische Spezifikationen

IRF3205 +BOM

TO-220AB Tube Power Transistor with N-Channel Silicon

Hersteller:

Infineon
Herstellerteil #:

IRF3205
Datenblatt:

IRF3205 Datenblatt (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IRF3205

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IRF3205 Allgemeine Beschreibung

The IRF3205 MOSFET, part of the esteemed IR MOSFET family, symbolizes a new era of power management solutions. By employing cutting-edge silicon processes, this MOSFET caters to a broad spectrum of applications ranging from DC motors and inverters to SMPS units, lighting fixtures, load switches, and portable electronics. Designers are presented with a rich selection of devices within the IR MOSFET family, allowing for tailored solutions to meet specific project demands. With industry-standard footprints available in both surface mount and through-hole packages, the IRF3205 facilitates seamless integration into designs while ensuring optimal performance and reliability

Hauptmerkmale

High power N-channel MOSFET
55V drain-source voltage
Up to 110A continuous drain current
0.0035 ohm on-resistance
Fast switching speed
Low gate charge
TO-220 package
RoHS compliant
Suitable for high power applications

Anwendung

Used in motor controls
Essential for power supplies
Common in DC converters
Applicable in inverters
Vital for battery management
Utilized in solar systems

Spezifikationen

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	55 V
Id - Continuous Drain Current	110 A	Rds On - Drain-Source Resistance	8 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	200 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	65 ns	Height	15.65 mm
Length	10 mm	Product Type	MOSFET
Rise Time	101 ns	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	50 ns
Typical Turn-On Delay Time	14 ns	Width	4.4 mm
Unit Weight	0.068784 oz

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..