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SQ2348ES-T1_GE3 +BOM

30V 8A 3W AEC-Q101 Certified MOSFET

SQ2348ES-T1_GE3 Allgemeine Beschreibung

Introducing the SQ2348ES-T1-GE3 small signal field-effect transistor, featuring a maximum drain current of 8A and a maximum voltage of 30V. This single-element, N-channel transistor is constructed with silicon and metal-oxide semiconductor technology. Housed in a TO-236AB package, it is halogen-free and RoHS compliant, aligning with environmental standards. With 3 pins, this transistor is a reliable component for a diverse range of electronic applications

Hauptmerkmale

  • Schottky diode with high reliability
  • Low current consumption and high isolation
  • 100% tested for quality assurance

Anwendung

  • The SQ2348ES-T1-GE3 MOSFET is commonly used in various applications such as power management, motor control, and DC-DC conversion
  • It is ideal for use in electronic devices, communication equipment, automotive systems, and industrial automation
  • Its low on-state resistance, high switching speeds, and high power handling capabilities make it suitable for high-performance and high-efficiency applications in various industries
  • Spezifikationen

    Product Category MOSFET Technology Si
    Mounting Style SMD/SMT Transistor Polarity N-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
    Id - Continuous Drain Current 8 A Rds On - Drain-Source Resistance 24 mOhms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
    Qg - Gate Charge 7.95 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 175 C Pd - Power Dissipation 3 W
    Channel Mode Enhancement Qualification AEC-Q101
    Tradename TrenchFET Series SQ
    Configuration Single Fall Time 6 ns
    Product Type MOSFET Rise Time 8 ns
    Factory Pack Quantity 3000 Subcategory MOSFETs
    Transistor Type 1 N-Channel Typical Turn-Off Delay Time 21 ns
    Typical Turn-On Delay Time 4.5 ns Part # Aliases SQ2348ES-T1_BE3
    Unit Weight 0.000282 oz

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