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Siehe Technische Spezifikationen

UF3C065030K3S +BOM

High-current 650V Silicon Carbide Power Field-Effect Transistor with low resistance of 0.035ohm

Hersteller:

Qorvo
Herstellerteil #:

UF3C065030K3S
Datenblatt:

UF3C065030K3S Datenblatt (PDF)
Technology:

SiC
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an UF3C065030K3S

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

UF3C065030K3S Allgemeine Beschreibung

Unveiling the UF3C065030K3S, a state-of-the-art silicon carbide (SiC) power module engineered for high-performance power electronic applications. With a current rating of 65A and a voltage rating of 1200V, this compact and lightweight module, featuring a three-phase bridge topology, is ideally suited for a wide array of power conversion systems, including renewable energy inverters, electric vehicles, and industrial motor drives. Incorporating advanced SiC MOSFET and Schottky diode technology, the module delivers high efficiency, low switching losses, and improved thermal performance compared to traditional silicon-based power modules, making it the perfect choice for high-frequency switching applications and high-temperature environments. Furthermore, the UF3C065030K3S includes an integrated gate driver, simplifying system design and reducing overall system size and cost. Additionally, it comes with built-in protection features, such as over-current and over-temperature protection, ensuring safe and reliable operation

Spezifikationen

Product Category	MOSFET	Technology	SiC
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	85 A	Rds On - Drain-Source Resistance	35 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	51 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	441 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	SiC FET	Series	UF3C
Configuration	Single	Product Type	MOSFET
Factory Pack Quantity	30	Subcategory	MOSFETs
Unit Weight	0.211644 oz

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