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Siehe Technische Spezifikationen

VRF2933

300W null - MOSFETs ROHS

Hersteller:

Microchip
Herstellerteil #:

VRF2933
Datenblatt:

VRF2933 Datenblatt (PDF)
Output Power (W) [max]:

30 - 600
Frequency (MHz) [max]:

30 - 175
Amplifier Class:

A,AB,C
Drain Supply Voltage (dc) (V) [max]:

50

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

VRF2933 Allgemeine Beschreibung

The VRF2933 is a high-power RF LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) transistor designed for RF power amplification applications.

Hauptmerkmale

Frequency Range: It is designed for operation in the frequency range of 1800 MHz to 2200 MHz.
Power Output: The transistor is capable of delivering high output power, typically in the range of several watts to tens of watts.
Voltage Rating: It has a maximum drain-source voltage (VDS) rating of typically 65 volts.
Current Rating: The maximum drain current (ID) rating is typically in the range of several amperes.
Efficiency: It is designed for high power efficiency, enabling efficient power amplification in RF systems.
Gain: The transistor offers high gain characteristics, providing amplification to the input RF signal.
Thermal Management: It may require appropriate thermal management techniques, such as the use of heat sinks or cooling systems, to ensure optimal performance and reliability.
Application: It is commonly used in various RF power amplifier applications, including wireless communication systems, cellular base stations, radio transmitters, and other high-power RF applications.

Spezifikationen

Product Type	RF Power MOSFET	Output Power (W) [max]	30 - 600
Frequency (MHz) [max]	30 - 175	Amplifier Class	A,AB,C
Drain Supply Voltage (dc) (V) [max]	50	feature-material	Si
feature-configuration	Single Triple Source	feature-channel-mode	Enhancement
feature-channel-type	N	feature-number-of-elements-per-chip	1
feature-mode-of-operation		feature-maximum-drain-source-voltage-v	170
feature-maximum-gate-source-voltage-v	±40	feature-maximum-gate-threshold-voltage-v	4.4
feature-maximum-continuous-drain-current-a	42	feature-maximum-drain-source-resistance-mohm
feature-typical-input-capacitance-vds-pf	740@50V	feature-maximum-power-dissipation-mw	648000
feature-output-power-w	300	feature-typical-power-gain-db	25
feature-minimum-frequency-mhz		feature-maximum-frequency-mhz	150
feature-packaging	Box	feature-pin-count	5
feature-cecc-qualified	No	feature-esd-protection
feature-military	No	feature-aec-qualified	No
feature-auto-motive	No	feature-p-pap	No
feature-eccn-code	EAR99	feature-svhc-exceeds-threshold	No

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