Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

2N4403G +BOM

PNP Bipolar Transistor, TO-92

Hersteller:

onsemi
Herstellerteil #:

2N4403G
Datenblatt:

2N4403G Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

3
ECCN Code:

EAR99
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an 2N4403G

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

2N4403G Allgemeine Beschreibung

From audio amplifiers to voltage regulators, the 2N4403G proves to be a versatile and reliable component that meets the demands of diverse applications. Its high-quality construction and consistent performance make it a trusted choice for professionals and hobbyists alike, offering peace of mind and exceptional functionality in every project

Hauptmerkmale

Wide Temperature Range from -55°C to +150°C
High-Gain Amplification with Low Noise Figure
Pin-Count Optimized for Reduced Component Count
Designed using Advanced Computer-Aided Design Tools
Suitable for High-Speed Telecommunications Systems
Frequency Selective Devices for Enhanced Performance

Spezifikationen

Source Content uid	2N4403G	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Pin Count	3
Reach Compliance Code		ECCN Code	EAR99
Collector Current-Max (IC)	0.6 A	Collector-Emitter Voltage-Max	40 V
Configuration	SINGLE	DC Current Gain-Min (hFE)	100
JEDEC-95 Code	TO-92	JESD-30 Code	O-PBCY-T3
JESD-609 Code	e1	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	PNP
Power Dissipation-Max (Abs)	1.5 W	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	TIN SILVER COPPER
Terminal Form	THROUGH-HOLE	Terminal Position	BOTTOM
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	200 MHz	Turn-off Time-Max (toff)	255 ns
Turn-on Time-Max (ton)	35 ns	Product Category	Bipolar Transistors - BJT
Mounting Style	Through Hole	Transistor Polarity	PNP
Collector- Emitter Voltage VCEO Max	40 V	Collector- Base Voltage VCBO	40 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	750 mV
Maximum DC Collector Current	600 mA	Pd - Power Dissipation	625 mW
Gain Bandwidth Product fT	200 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	600 mA
DC Collector/Base Gain hfe Min	30	Height	5.33 mm
Length	5.2 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	5000	Subcategory	Transistors
Technology	Si	Width	4.19 mm

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..