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BSS215PH6327XTSA1 +BOM

Bulk Packaged P-Channel 20V 1.5A MOSFET on Tape, SOT-23

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

BSS215PH6327XTSA1
Datenblatt:

BSS215PH6327XTSA1 Datenblatt (PDF)
Series:

OptiMOS™
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

20 V
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an BSS215PH6327XTSA1

BSS215PH6327XTSA1 Allgemeine Beschreibung

Infineon's OptiMOS p-channel power MOSFETs, such as product BSS215PH6327XTSA1, are designed to meet the highest quality and performance demands in power system design. With features such as enhancement mode and avalanche rating, these MOSFETs are suitable for a wide range of applications including automotive, consumer electronics, eMobility, motor control, and more. The Pb-free lead plating and RoHS compliance make them environmentally friendly, while the small signal packages approved to AEC Q101 ensure reliability in automotive applications. Whether used in DC-DC converters, notebooks, or onboard chargers, these highly innovative MOSFETs consistently deliver excellent on-state resistance and figure of merit characteristics, making them ideal for power management in various systems

Infineon Technologies Corporation Inventar

Hauptmerkmale

Package Type: SOT-23
Manufacturer: STMicroelectronics
Transistor Polarity: P-Channel
Drain-Source Voltage: -20V
Continuous Drain Current: -5A
On-State Resistance: 0.040 Ohms
Power Dissipation: 1W
Maximum Operating Temperature: 150°C

Infineon Technologies Corporation Originalbestand

Anwendung

Medical tools
Consumer goods
Efficient appliances

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	OptiMOS™
FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V	Rds On (Max) @ Id, Vgs	150mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 11µA	Gate Charge (Qg) (Max) @ Vgs	3.6 nC @ 4.5 V
Vgs (Max)	±12V	Input Capacitance (Ciss) (Max) @ Vds	346 pF @ 15 V
FET Feature	-	Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSS215	RHoS	yes
PBFree	yes	HalogenFree	yes

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..