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Siehe Technische Spezifikationen

BSS306NH6327XTSA1 +BOM

SOT-23 Single N-Channel 30 V 57 mOhm 1.5 nC OptiMOS Small Signal Mosfet

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

BSS306NH6327XTSA1
Datenblatt:

BSS306NH6327XTSA1 Datenblatt (PDF)
Series:

OptiMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an BSS306NH6327XTSA1

BSS306NH6327XTSA1 Allgemeine Beschreibung

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.3 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) Ohm = 93 / Gate-Source Voltage V = 20 / Fall Time ns = 1.4 / Rise Time ns = 2.3 / Turn-OFF Delay Time ns = 8.3 / Turn-ON Delay Time ns = 4.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Power Dissipation (Pd) mW = 500

Infineon Technologies Corporation Inventar

Hauptmerkmale

Enhancement mode
Logic level
Avalanche rated
Fast switching
Dv/dt rated
Pb-free lead-plating
RoHS compliant, halogen-free
Qualified according to automotive standards
PPAP capable
Low R
DS(on)
Small packages save PCB space
Best-in-class quality and reliability

Infineon Technologies Corporation Originalbestand

Anwendung

Automotive
Lighting
Battery management
Load switch
DC-DC
eMobility
Motor control
Onboard charger
Telecom

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	OptiMOS™
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	57mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id	2V @ 11µA	Gate Charge (Qg) (Max) @ Vgs	1.5 nC @ 5 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	275 pF @ 15 V
FET Feature	-	Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSS306	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	2.3 A
Rds On - Drain-Source Resistance	57 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.6 V	Qg - Gate Charge	1.5 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	500 mW	Channel Mode	Enhancement
Qualification	AEC-Q101	Configuration	Single
Fall Time	1.4 ns	Forward Transconductance - Min	5 S
Height	1.1 mm	Length	2.9 mm
Product Type	MOSFET	Rise Time	2.3 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	8.3 ns
Typical Turn-On Delay Time	4.4 ns	Width	1.3 mm
Part # Aliases	BSS306N H6327 SP000928940	Unit Weight	0.000282 oz

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