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Siehe Technische Spezifikationen

BUK7S0R7-40HJ +BOM

N-Channel 40 V 425A (Ta) 375W (Ta) Surface Mount LFPAK88 (SOT1235)

Hersteller:

NEXPERIA USA INC.
Herstellerteil #:

BUK7S0R7-40HJ
Datenblatt:

BUK7S0R7-40HJ Datenblatt (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

40 V
Current - Continuous Drain (Id) @ 25°C:

425A (Ta)

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

BUK7S0R7-40HJ Allgemeine Beschreibung

Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability.

Hauptmerkmale

Fully automotive qualified to beyond AEC-Q101:-55 °C to +175 °C rating suitable for thermally demanding environments
-55 °C to +175 °C rating suitable for thermally demanding environments
LFPAK88 package:Designed for smaller footprint and improved power density over older wire bond packages such as D²PAK for today’s space constrained high power automotive applicationsThin package and copper clip enables LFPAK88 to be highly efficient thermally
Designed for smaller footprint and improved power density over older wire bond packages such as D²PAK for today’s space constrained high power automotive applications
Thin package and copper clip enables LFPAK88 to be highly efficient thermally
LFPAK copper clip technology enabling improvements over wire bond packages by:Increased maximum current capability and excellent current spreadingImproved RDSonLow source inductanceLow thermal resistance Rth
Increased maximum current capability and excellent current spreading
Improved RDSon
Low source inductance
Low thermal resistance Rth
LFPAK Gull Wing leads:Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packagesVisual (AOI) soldering inspection, no need for expensive x-ray equipmentEasy solder wetting for good mechanical solder joint
Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packages
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joint
Unique 40 V Trench 9 superjunction technology:Reduced cell pitch and superjunction platform enables lower RDSon in the same footprintImproved SOA and avalanche capability compared to standard TrenchMOSTight VGS(th) limits enable easy paralleling of MOSFETs
Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint
Improved SOA and avalanche capability compared to standard TrenchMOS
Tight VGS(th) limits enable easy paralleling of MOSFETs

Anwendung

12 V automotive systems
48 V DC/DC systems (on 12 V secondary side)
Higher power motors, lamps and solenoid control
Reverse polarity protection
LED lighting
Ultra high performance power switching

Spezifikationen

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	Current - Continuous Drain (Id) @ 25°C	425A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	0.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	3.6V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	202 nC @ 10 V
Vgs (Max)	+20V, -10V	Input Capacitance (Ciss) (Max) @ Vds	15719 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	375W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

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Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..