Diese Website verwendet Cookies. Durch die Nutzung dieser Website stimmen Sie der Verwendung von Cookies zu. Weitere Informationen finden Sie in unseren Datenschutzrichtlinie.

Die Bilder dienen nur als Referenz,

Siehe Technische Spezifikationen

FCP20N60 +BOM

Featuring SUPERFET® technology, the FCP20N60 is a robust N-Channel Power MOSFET optimized for easy driving applications

Hersteller:

Onsemi
Herstellerteil #:

FCP20N60
Datenblatt:

FCP20N60 Datenblatt (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an FCP20N60

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FCP20N60 Allgemeine Beschreibung

Introducing the FCP20N60 SuperFET® MOSFET by ON Semiconductor, a groundbreaking high voltage super-junction MOSFET that incorporates charge balance technology for exceptional performance. This advanced technology results in outstanding low on-resistance and reduced gate charge, setting a new standard for conduction loss minimization and superior switching characteristics. With impressive dv/dt rate and higher avalanche energy, the SuperFET MOSFET is the perfect solution for a wide range of switching power applications, including PFC, server/telecom power, FPD TV power, ATX power, and industrial power. Trust the reliability and efficiency of SuperFET MOSFET for your power needs

Hauptmerkmale

800V @ T_j = 125°C
Typ. R_ds(on) = 200 mΩ
Low Gate Leakage (Typ. I_gs = 10 μA)
High Immunity to Electrostatic Discharge (Typ. V_c = 1 kV)
Typ. R_c = 300 Ω
Ultra Low Input Capacitance (Typ. C_i = 10 pF)

Anwendung

Solar Inverter
AC-DC Power Supply

Spezifikationen

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V	Id - Continuous Drain Current	20 A
Rds On - Drain-Source Resistance	190 mOhms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	208 W	Channel Mode	Enhancement
Series	FCP20N60	Configuration	Single
Fall Time	65 ns	Forward Transconductance - Min	17 S
Height	16.3 mm	Length	10.67 mm
Product Type	MOSFET	Rise Time	140 ns
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	230 ns	Typical Turn-On Delay Time	62 ns
Width	4.7 mm	Unit Weight	0.068784 oz

Servicerichtlinien und andere

After-Sales- und Abwicklungsbezogen

Zahlung

Bezahlverfahren

TT/Überweisung

Paypal

Western Union

Geldgramm

Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:

[email protected]

Versand & Verpackung

Versandart

Fedex

UPS

DHL

NTN

Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..

Garantie

365-Tage-Produkt

Qualitätsgarantie

Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.

Bewertungen und Rezensionen

Mehr

J**e 06.19.2024

The product corresponds to the description on the site. Very satisfied. Huge gratitude to the seller!

E**e 04.03.2021

Highly satisfied with the speedy delivery of my NTS0104GU12 components from Avaq. Received them in perfect condition within a few days, saving me both time and hassle.

T**y 11.06.2020

Two quiet in ukraine ukrpoy. All right. On the dress of buli viiavleni slidi glue, with grief and viivali. For experimentation and self-tapping.

B**n 09.13.2020

Kit came in fine, had extra LED's, nice project to practice soldering