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IAUT150N10S5N035ATMA1 +BOM

N-Channel Automotive MOSFET with 100V Voltage Rating and 150A Current Capacity

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

IAUT150N10S5N035ATMA1
Datenblatt:

IAUT150N10S5N035ATMA1 Datenblatt (PDF)
Series:

OptiMOS™-5
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IAUT150N10S5N035ATMA1

IAUT150N10S5N035ATMA1 Allgemeine Beschreibung

The IAUT150N10S5N035ATMA1's high performance and exceptional reliability make it an ideal choice for automotive power electronics designers looking for a rugged, efficient, and environmentally friendly solution. With its impressive feature set and automotive qualification, this MOSFET is well-suited for a wide range of power management and motor control applications in the automotive industry

Infineon Technologies Corporation Inventar

Hauptmerkmale

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
Ultra low Rds(on)
100% Avalanche tested

Infineon Technologies Corporation Originalbestand

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	OptiMOS™-5
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	Rds On (Max) @ Id, Vgs	3.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	3.8V @ 110µA	Gate Charge (Qg) (Max) @ Vgs	87 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	6110 pF @ 50 V
FET Feature	-	Power Dissipation (Max)	166W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IAUT150	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V	Id - Continuous Drain Current	150 A
Rds On - Drain-Source Resistance	3.5 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.2 V	Qg - Gate Charge	67 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	166 W	Channel Mode	Enhancement
Qualification	AEC-Q101	Configuration	Single
Fall Time	26 ns	Product Type	MOSFET
Rise Time	7 ns	Factory Pack Quantity	2000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	23 ns	Typical Turn-On Delay Time	12 ns
Part # Aliases	IAUT150N10S5N035 SP001416126	Unit Weight	0.027197 oz

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..