Bezahlverfahren
IAUT260N10S5N019ATMA1 +BOM
Features a low 3.8V threshold voltage at 210uA
HSOF-8-
Hersteller:
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Herstellerteil #:
IAUT260N10S5N019ATMA1
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Datenblatt:
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Series:
OptiMOS™-5
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
100 V
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EDA/CAD Modelle:
Fordern Sie kostenlose CAD-Modelle für an IAUT260N10S5N019ATMA1
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IAUT260N10S5N019ATMA1, guaranteed quotes back within 12hr.
Verfügbarkeit: 3525 Stck
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IAUT260N10S5N019ATMA1 Allgemeine Beschreibung
Infineon Technologies introduces the IAUT260N10S5N019ATMA1, an innovative power module specifically designed for electric and hybrid electric vehicles within the automotive industry. Boasting a substantial current rating of 260A and an operating voltage of 1000V, this intelligent power module incorporates advanced technology to deliver efficient power management solutions, ensuring reliable performance and safety within high-voltage environments. Additionally, the IAUT260N10S5N019ATMA1 is equipped with integrated protection features such as overvoltage, overcurrent, and overtemperature protection, enhancing the module's reliability and extending its durability. Its compact and lightweight package enables seamless integration into space-constrained automotive systems, simplifying the design and manufacturing process for engineers operating within the automotive sector
Hauptmerkmale
- N-channel - Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green product (RoHS compliant)
- Ultra low Rds(on)
- 100% Avalanche tested
Spezifikationen
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | OptiMOS™-5 |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 260A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 1.9mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 210µA | Gate Charge (Qg) (Max) @ Vgs | 166 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 11830 pF @ 50 V |
FET Feature | - | Power Dissipation (Max) | 300W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IAUT260 | RHoS | yes |
PBFree | yes | HalogenFree | yes |
Servicerichtlinien und andere
After-Sales- und Abwicklungsbezogen
Für alternative Zahlungskanäle kontaktieren Sie uns bitte unter:
[email protected]Versandart
AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..
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Qualitätsgarantie
Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.
IAUT260N10S5N019ATMA1 Datenblatt PDF
IAUT260N10S5N019ATMA1 PDF Vorschau
In Stock: 3.525
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | - | - |
Die unten angegebenen Preise dienen nur als Referenz.
18 days delivery to bashkiria. 10 pieces. checked on gm328a-workers, but in the scheme did not insert and in working mode has not tried.