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Siehe Technische Spezifikationen

IMW65R048M1HXKSA1 +BOM

Silicon carbide power metal-oxide-semiconductor field-effect transistor

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

IMW65R048M1HXKSA1
Datenblatt:

IMW65R048M1HXKSA1 Datenblatt (PDF)
Series:

CoolSIC™ M1
FET Type:

N-Channel
Technology:

SiCFET (Silicon Carbide)
Drain To Source Voltage (Vdss):

650 V
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IMW65R048M1HXKSA1

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IMW65R048M1HXKSA1 Allgemeine Beschreibung

The IMW65R048M1HXKSA1 GaN FET power transistor is a game-changer in high-performance applications, offering a remarkable low ON-resistance of 48 mΩ and a high breakdown voltage of 650 V. Its capabilities make it a versatile solution for a wide range of power switching applications, delivering exceptional performance in modern electronic systems. With the ability to operate at high frequencies, this transistor enables efficient power conversion, ensuring optimal functionality in electronic devices

Hauptmerkmale

Low capacitances
Optimized switching behavior at higher currents
Commutation robust fast body diode with low reverse recovery charge (Q
rr
Superior gate oxide reliability
Excellent thermal behavior
Increased avalanche capability
Works with standard drivers
High performance, high reliability and ease of use
Allows high system efficiency
Reduces system cost and complexity
Enables smaller system size
Works in topologies with continuous hard commutation
Fit for high temperature and harsh operations
Enables bi-directional topologies

Anwendung

Server
Telecom
SMPS
Solar energy systems
Energy storage and battery formation
UPS
EV charging
Motor drives

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	CoolSIC™ M1
FET Type	N-Channel	Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V	Current - Continuous Drain (Id) @ 25°C	39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V	Rds On (Max) @ Id, Vgs	64mOhm @ 20.1A, 18V
Vgs(th) (Max) @ Id	5.7V @ 6mA	Gate Charge (Qg) (Max) @ Vgs	33 nC @ 18 V
Vgs (Max)	+23V, -5V	Input Capacitance (Ciss) (Max) @ Vds	1118 pF @ 400 V
FET Feature	-	Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	IMW65R048	RHoS	yes
PBFree	yes	HalogenFree	yes

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Garantie

365-Tage-Produkt

Qualitätsgarantie

Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.

Bewertungen und Rezensionen

Mehr

N**s 10.24.2023

Everything corresponds to the description. Reliable seller. Thank you

J**n 02.16.2023

On my copy quality soldering, the screen is located exactly on silk screen. Everything works.

L**m 04.22.2021

It came in just three weeks.

J**h 10.29.2020

The seller sent the order quickly passed this case about two weeks i order it not for the first time only this time the packaging pumped and so everything is goodThank you