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Siehe Technische Spezifikationen

IMW65R027M1HXKSA1 +BOM

MOSFET with Silicon Carbide technology

Hersteller:

Infineon Technologies Corporation
Herstellerteil #:

IMW65R027M1HXKSA1
Datenblatt:

IMW65R027M1HXKSA1 Datenblatt (PDF)
Series:

CoolSIC™ M1
FET Type:

N-Channel
Technology:

SiCFET (Silicon Carbide)
Drain To Source Voltage (Vdss):

650 V
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IMW65R027M1HXKSA1

IMW65R027M1HXKSA1 Allgemeine Beschreibung

N-Channel 650 V 47A (Tc) 189W (Tc) Through Hole PG-TO247-3-41

Infineon Technologies Corporation Inventar

Hauptmerkmale

Low capacitances
Optimized switching behavior at higher currents
Commutation robust fast body diode with low reverse recovery charge (Q
rr
Superior gate oxide reliability
Excellent thermal behavior
Increased avalanche capability
Works with standard drivers
High performance, high reliability and ease of use
Allows high system efficiency
Reduces system cost and complexity
Enables smaller system size
Works in topologies with continuous hard commutation
Fit for high temperature and harsh operations
Enables bi-directional topologies

Infineon Technologies Corporation Originalbestand

Anwendung

Server
Telecom
SMPS
Solar energy systems
Energy storage and battery formation
UPS
EV charging
Motor drives

Spezifikationen

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	CoolSIC™ M1
FET Type	N-Channel	Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V	Current - Continuous Drain (Id) @ 25°C	47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V	Rds On (Max) @ Id, Vgs	34mOhm @ 38.3A, 18V
Vgs(th) (Max) @ Id	5.7V @ 11mA	Gate Charge (Qg) (Max) @ Vgs	62 nC @ 18 V
Vgs (Max)	+23V, -5V	Input Capacitance (Ciss) (Max) @ Vds	2131 pF @ 400 V
FET Feature	-	Power Dissipation (Max)	189W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	IMW65R027	RHoS	yes
PBFree	yes	HalogenFree	yes

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..

Garantie

365-Tage-Produkt

Qualitätsgarantie

Wir versprechen, 365 Tage Qualitätssicherung für alle unsere Produkte zu bieten.

Bewertungen und Rezensionen

Mehr

F**s 12.21.2023

Order received before 60 days of protection to the c.p. 94462 by yanwen economic air mail, i paid it 2019-08-17 15:03 and received it on september 25, 39 day s since payment, although i didn't hear from him for a short time being untraceable there was no need to contact the seller and i'm faster than another ultrasonic from another store i ordered earlier. The order arrived without damage in a slightly padded envelope and the product corresponds to the description, even when they didn't come with anti-est bag. The quality is excellent and at a good price, buy 2 and the 2 work properly. I recommend the seller and the product, highly recommended. To buyers, leave your impressions not just an empty rating, it helps others to know what the seller and product looks like.

I**c 08.11.2023

Just instant delivery. That's what it means to pay it separately with tracking.

S**e 11.23.2022

good quality potentiometer

A**n 06.01.2022

Exactly what i ordered.