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Siehe Technische Spezifikationen

IPA50R280CE +BOM

Transistor with 3-pin (3+Tab) configuration

Hersteller:

INFINEON
Herstellerteil #:

IPA50R280CE
Datenblatt:

IPA50R280CE Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IPA50R280CE

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IPA50R280CE Allgemeine Beschreibung

If high efficiency power applications are what you need, look no further than the IPA50R280CE power MOSFET transistor from Infineon Technologies. With a breakdown voltage of 900V, a continuous drain current of 14A, and a low on-state resistance of 280mΩ, it is the ideal choice for power supplies, lighting, and motor control applications where efficiency and reliability are crucial. Its TO-220 package ensures exceptional thermal performance and easy mounting onto heat sinks, while its low gate charge and fast switching characteristics make it a perfect fit for high frequency switching applications. What's more, the IPA50R280CE is designed to operate at high temperatures, with a maximum junction temperature of 150°C, and includes built-in protection features such as overcurrent and overtemperature protection, guaranteeing safe and secure operation under various load conditions

Hauptmerkmale

Extremely low losses due to very low FOM RdsonQg and Eoss
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
Qualified for standard grade applications

Spezifikationen

Source Content uid	IPA50R280CE	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	231 mJ	Case Connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	500 V
Drain-source On Resistance-Max	0.28 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	42.9 A
Surface Mount	NO	Terminal Finish	TIN
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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