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IPW60R190C6 +BOM

MOSFET N-Ch 600V 20.2A TO247-3 CoolMOS C6

Hersteller:

INFINEON
Herstellerteil #:

IPW60R190C6
Datenblatt:

IPW60R190C6 Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Not Recommended
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IPW60R190C6

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IPW60R190C6 Allgemeine Beschreibung

Infineon's IPW60R190C6 power MOSFET is a game-changer in the realm of power management solutions, offering unmatched performance in handling high voltages and power loads. Utilizing the advanced CoolMOS™ C6 technology, this MOSFET strikes the perfect balance between low conduction and switching losses, delivering exceptional efficiency and robustness. Its impressive voltage rating of 600V and a hefty drain current rating of approximately 29.5A make it an ideal choice for demanding applications where reliability is paramount. Encased in a TO-247 package, the IPW60R190C6 not only ensures superior thermal management but also simplifies the mounting process for enhanced heat dissipation. Whether it's switch-mode power supplies, motor drives, lighting systems, or renewable energy applications, this MOSFET excels across the board, offering unparalleled efficiency and reliability for optimized system performance and durability

Hauptmerkmale

Extremely low losses due to very low FOM RdsonQg and Eoss
Very high commutation ruggedness
Easy to use/drive
JEDEC1) qualified, Pb-free plating, Halogen free

Spezifikationen

Source Content uid	IPW60R190C6	Pbfree Code	Yes
Part Life Cycle Code	Not Recommended	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
Application	SWITCHING	Configuration	SINGLE WITH BUILT-IN DIODE
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-247
JESD-30 Code	R-PSFM-T3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Surface Mount	NO	Terminal Finish	TIN
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	10	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	20.2 A	Rds On - Drain-Source Resistance	190 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3.5 V
Qg - Gate Charge	63 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	151 W
Channel Mode	Enhancement	Tradename	CoolMOS
Series	CoolMOS C6	Height	21.1 mm
Length	16.13 mm	Product Type	MOSFET
Factory Pack Quantity	240	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	5.21 mm
Part # Aliases	SP000621160 IPW6R19C6XK IPW60R190C6FKSA1	Unit Weight	0.211644 oz

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