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IPW65R080CFD +BOM

Introducing the IPW65R080CFD: Your solution for N-Channel MOSFET Transistor needs

IPW65R080CFD Allgemeine Beschreibung

The IPW65R080CFD power MOSFET transistor is a game-changer when it comes to efficiency and reliability in various applications. With an impressive on-state resistance of 0.08 ohms and a robust drain current rating of 65A, this transistor is a top choice for power management systems, motor control, and other high-power needs. Its TO-247 package ensures superior thermal resistance and power dissipation capabilities, allowing it to operate seamlessly even in extreme temperature conditions. The maximum junction temperature of 175°C further guarantees long-term performance and durability under challenging circumstances. Additionally, the IPW65R080CFD boasts low gate charge and gate-source voltage ratings, facilitating swift switching speeds and minimal power loss during operation. Its capability to handle high currents efficiently makes it a reliable option for high frequency and high-power applications that demand utmost effectiveness and dependability

Hauptmerkmale

  • Advanced power electronics technology
  • Efficient energy management solutions
  • High-performance switching devices
  • Simplified thermal design options
  • Compact and reliable packaging designs
  • Optimized energy efficiency performance

Anwendung

  • Eco-friendly power solutions
  • Intelligent power control
  • Robust electrical systems

Spezifikationen

IDpuls max 137.0 A RthJC max 0.32 K/W
RthJA max 62.0 K/W Ptot max 391.0 W
VDS max 650.0 V Polarity N
ID max 43.3 A RDS (on) max 80.0 mΩ
Mounting THT Special Features fast recovery diode
VGS(th) max 4.5 V VGS(th) min 3.5 V
Operating Temperature max 150.0 °C Operating Temperature min -55.0 °C

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In Stock: 7.230

Minimum Order: 1

Menge. Einzelpreis Ext. Preis
1+ $5,368 $5,37
10+ $4,715 $47,15
30+ $4,319 $129,57
100+ $3,986 $398,60

Die unten angegebenen Preise dienen nur als Referenz.