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Siehe Technische Spezifikationen

IPW65R080CFDA +BOM

High-current Automotive N-Channel MOSFET, 650V Drain-to-Source Voltage

Hersteller:

INFINEON
Herstellerteil #:

IPW65R080CFDA
Datenblatt:

IPW65R080CFDA Datenblatt (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IPW65R080CFDA

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IPW65R080CFDA Allgemeine Beschreibung

Whether used in industrial motor controls, power supplies, or renewable energy systems, the IPW65R080CFDA delivers outstanding performance and long-term reliability. Its single-element design simplifies circuit integration, while its high switching speed enables efficient power conversion

Hauptmerkmale

HIGH RELIABILITY

Anwendung

SWITCHING

Spezifikationen

Source Content uid	IPW65R080CFDA	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY	Avalanche Energy Rating (Eas)	1160 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	650 V
Drain Current-Max (ID)	43.3 A	Drain-source On Resistance-Max	0.08 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-247
JESD-30 Code	R-PSFM-T3	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	137 A	Reference Standard	AEC-Q101
Surface Mount	NO	Terminal Finish	TIN
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	43.3 A	Rds On - Drain-Source Resistance	72 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3.5 V
Qg - Gate Charge	161 nC	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	391 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	CoolMOS	Series	CoolMOS CFDA
Fall Time	6 ns	Height	21.1 mm
Length	16.13 mm	Product Type	MOSFET
Rise Time	18 ns	Factory Pack Quantity	240
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	85 ns	Typical Turn-On Delay Time	20 ns
Width	5.21 mm	Part # Aliases	IPW65R8CFDAXK SP000875806 IPW65R080CFDAFKSA1
Unit Weight	0.211644 oz	IDpuls max	137.0 A
RthJA max	62.0 K/W	RthJC max	0.32 K/W
Ptot max	391.0 W	Topology	Full Bridge
Special Features	automotive	VDS max	650.0 V
VGS(th) max	4.5 V	Polarity	N
ID max	43.3 A	VGS(th) min	3.5 V
Operating Temperature max	150.0 °C	Operating Temperature min	-40.0 °C
RDS (on) max	80.0 mΩ	Mounting	THT
QG max	161.0 nC

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Verpackung

AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..