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Siehe Technische Spezifikationen

IRF3711PBF +BOM

Power Field-Effect Transistor, 110A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Hersteller:

INFINEON
Herstellerteil #:

IRF3711PBF
Datenblatt:

IRF3711PBF Datenblatt (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

460 mJ
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IRF3711PBF

IRF3711PBF Allgemeine Beschreibung

The IRF3711PBF is a Power MOSFET designed for high-power applications. It is a N-channel MOSFET with a drain-source voltage rating of 20V and a continuous drain current of 57A. The MOSFET has a low on-resistance of 14.5mΩ, making it suitable for applications where low power loss and high efficiency are important.The IRF3711PBF has a gate threshold voltage of 2V and a gate-source voltage rating of ±20V. It features a fast switching speed and a high pulse current capability, making it suitable for applications that require high-speed switching.The MOSFET is housed in a TO-220AB package, which provides good thermal conduction and mechanical strength. It is RoHS compliant and halogen-free, making it environmentally friendly.

Spezifikationen

Source Content uid	IRF3711PBF	Part Life Cycle Code	Obsolete
Reach Compliance Code	compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	460 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	20 V
Drain Current-Max (ID)	110 A	Drain-source On Resistance-Max	0.006 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	120 W
Pulsed Drain Current-Max (IDM)	440 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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