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Siehe Technische Spezifikationen

IRF6215S +BOM

The P-channel MOSFET IRF6215S has a maximum rating of 13A and 150V

Hersteller:

INFINEON
Herstellerteil #:

IRF6215S
Datenblatt:

IRF6215S Datenblatt (PDF)
Part Life Cycle Code:

Not Recommended
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED, HIGH RELIABILITY
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IRF6215S

IRF6215S Allgemeine Beschreibung

The IRF6215S from Infineon Technologies is a high-performance Power MOSFET transistor designed for power management applications. With a maximum voltage rating of 150V and a continuous drain current of 4.3A, this N-Channel enhancement mode transistor offers efficient power handling and minimal power losses due to its low on-resistance of 0.22 ohms. Its fast switching speed and TO-263 package make it suitable for high frequency applications and provide good thermal performance for easy mounting on a PCB. With a gate threshold voltage of 2-4V and a maximum gate-source voltage of ±20V, the IRF6215S ensures reliable and efficient power management. Operating over a wide temperature range of -55 to 175 degrees Celsius, this transistor is versatile and suitable for use in various environments

Spezifikationen

Part Life Cycle Code	Not Recommended	Reach Compliance Code	compliant
ECCN Code	EAR99	Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas)	310 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	150 V
Drain Current-Max (ID)	13 A	Drain-source On Resistance-Max	0.29 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e0	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	225	Polarity/Channel Type	P-CHANNEL
Pulsed Drain Current-Max (IDM)	44 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN LEAD
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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