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IRF7907PBF +BOM

Dual N-channel 30V MOSFET Transistor

IRF7907PBF Allgemeine Beschreibung

With its cutting-edge features, such as a low on-resistance of 0.014 ohms, maximum drain-source voltage of 30V, and continuous drain current of 26A, the IRF7907PBF is engineered to deliver superior performance in various electronic applications. Its TO-220 package ensures efficient heat dissipation and easy mounting, while its wide junction temperature range and fast switching speed make it a reliable choice for demanding operating conditions. This power MOSFET transistor is the perfect solution for power electronics applications that demand high efficiency and reliability, from power supplies to motor control and automotive systems. Trust the IRF7907PBF to deliver exceptional performance and reliability in your electronic designs

Spezifikationen

Source Content uid IRF7907PBF Part Life Cycle Code Obsolete
Reach Compliance Code compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 15 mJ Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.0118 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 2
Number of Terminals 8 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W Pulsed Drain Current-Max (IDM) 85 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position DUAL Transistor Element Material SILICON

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