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Siehe Technische Spezifikationen

IRFB7434PBF +BOM

Power rating of 294W at 100A and voltage drop of 3.9V at 250uA

Hersteller:

INFINEON
Herstellerteil #:

IRFB7434PBF
Datenblatt:

IRFB7434PBF Datenblatt (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

65 Weeks
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IRFB7434PBF

IRFB7434PBF Allgemeine Beschreibung

Meet the IRFB7434PBF, a top-of-the-line Power Field-Effect Transistor that sets the standard for high-current, low-voltage applications. Its N-Channel design and Silicon construction make it suitable for a wide range of industrial and commercial uses. With a maximum drain current of 195A and a minimal on-state resistance of 0.0016ohm, this MOSFET delivers outstanding power handling capabilities. The TO-220AB package ensures easy installation and efficient heat dissipation, while the halogen-free and RoHS compliant materials make it a responsible choice for environmentally conscious applications

Hauptmerkmale

A high-power MOSFET transistor designed for efficient power management
Features 2mΩ low on-resistance and 195A continuous drain current
Rated voltage: 55V with an operating temperature range of -40°C to +150°C
To-220 package compliant with RoHS directive for environmental safety
Applications include motor control, DC-DC converters and inverters
A reliable choice for high-efficiency power management solutions

Anwendung

High power MOSFET transistor
Perfect for motor control
Low on-resistance device

Spezifikationen

Source Content uid	IRFB7434PBF	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	65 Weeks	Avalanche Energy Rating (Eas)	490 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	40 V	Drain Current-Max (ID)	195 A
Drain-source On Resistance-Max	0.0016 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	294 W	Pulsed Drain Current-Max (IDM)	1270 A
Surface Mount	NO	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..