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Siehe Technische Spezifikationen

IRFU9024N +BOM

Silicon Metal-oxide Semiconductor FET with 55V and 0.175ohm

Hersteller:

INFINEON
Herstellerteil #:

IRFU9024N
Datenblatt:

IRFU9024N Datenblatt (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Additional Feature:

HIGH RELIABILITY
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IRFU9024N

IRFU9024N Allgemeine Beschreibung

When it comes to power MOSFETs, the IRFU9024N stands out as a top contender in the market. Its wide portfolio of devices caters to the diverse needs of designers across different industries, making it a go-to solution for various applications. From controlling DC motors to powering inverters and lighting systems, this MOSFET is a reliable choice that offers consistent performance and reliability. With its industry standard footprints and availability in different packages, integrating the IRFU9024N into your design is a hassle-free process that saves time and effort. Whether you're a seasoned engineer or a novice designer, this MOSFET is a valuable asset that will enhance the functionality and efficiency of your projects

Hauptmerkmale

HIGH RELIABILITY

Anwendung

SWITCHING

Spezifikationen

Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Additional Feature	HIGH RELIABILITY
Avalanche Energy Rating (Eas)	62 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	55 V
Drain Current-Max (ID)	11 A	Drain-source On Resistance-Max	0.175 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-251AA
JESD-30 Code	R-PSIP-T3	JESD-609 Code	e0
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	245	Polarity/Channel Type	P-CHANNEL
Pulsed Drain Current-Max (IDM)	44 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	TIN LEAD
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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AVAQ bestimmt und verpackt alle Geräte auf der Grundlage der Schutzanforderungen gegen elektrostatische Entladung (ESD) und Feuchtigkeitsempfindlichkeit (MSL)..