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IRG7PSH73K10PBF +BOM

Optimized for refrigeration systems

Hersteller:

Infineon
Herstellerteil #:

IRG7PSH73K10PBF
Datenblatt:

IRG7PSH73K10PBF Datenblatt (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
EDA/CAD Modelle:

Fordern Sie kostenlose CAD-Modelle für an IRG7PSH73K10PBF

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IRG7PSH73K10PBF Allgemeine Beschreibung

The IRG7PSH73K10PBF IGBT transistor is a versatile and high-performance device designed for demanding applications. With a collector current of 220A and a collector-emitter voltage Vces of 1200V, this transistor can handle high-power loads with ease. The N-channel design ensures efficient switching and low conduction losses, making it ideal for power electronics applications. The TO-247AA case style offers easy mounting and efficient thermal management, allowing for reliable operation in various environments. With a power dissipation max of 1.15kW, this transistor can handle high-power applications without compromising performance. The wide operating temperature range of -55°C to +175°C ensures reliable operation in extreme conditions, making the IRG7PSH73K10PBF an excellent choice for applications requiring high power and reliability

Hauptmerkmale

Low VCE (ON) Trench IGBT Technology
Low Switching Losses
Maximum Junction Temperature 175 °C
10 μS short Circuit SOA
Square RBSOA
100% of The Parts Tested for ILM
Positive VCE (ON) Temperature Coefficient
Tight Parameter Distribution
Lead Free Package
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation

Spezifikationen

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	2 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Continuous Collector Current at 25 C	220 A
Pd - Power Dissipation	1.15 kW	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Continuous Collector Current Ic Max	220 A
Gate-Emitter Leakage Current	400 nA	Height	20.8 mm
Length	16.1 mm	Product Type	IGBT Transistors
Factory Pack Quantity	25	Subcategory	IGBTs
Width	5.5 mm	Part # Aliases	SP001549408
Unit Weight	0.211644 oz

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