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Silicon-based N-Channel MOSFET with 80V Voltage, 39A Current, and DPAK Tube Packaging
TO-252-3Hersteller:
International Rectifier
Herstellerteil #:
IRLR2908PBF
Datenblatt:
Part Life Cycle Code:
Obsolete
Reach Compliance Code:
not_compliant
ECCN Code:
EAR99
Additional Feature:
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
EDA/CAD Modelle:
Bitte füllen Sie das kurze Formular unten aus und wir werden Ihnen umgehend ein Angebot zukommen lassen..
Step up your power management game with the IRLR2908PBF Power FET. Boasting a maximum current handling capacity of 30A and a voltage rating of 80V, this N-Channel MOSFET is perfect for demanding applications. The ultra-low on-resistance of 0.028ohm ensures efficient power delivery with minimal losses. Encased in a TO-252AA package, also known as DPAK-3, this FET guarantees easy installation and thermal performance. Plus, its Lead-Free and Plastic composition makes it a sustainable and durable choice for your electronic designs
Source Content uid | IRLR2908PBF | Part Life Cycle Code | Obsolete |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Avalanche Energy Rating (Eas) | 250 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 80 V | Drain Current-Max (ID) | 30 A |
Drain-source On Resistance-Max | 0.028 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-252AA | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 120 W | Pulsed Drain Current-Max (IDM) | 150 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN OVER NICKEL | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $0,431 | $0,43 |
200+ | $0,167 | $33,40 |
500+ | $0,161 | $80,50 |
1000+ | $0,158 | $158,00 |
Die unten angegebenen Preise dienen nur als Referenz.
Alle Stücklisten (BOM) können per E-Mail gesendet werden an
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