Bezahlverfahren
IXBF55N300 +BOM
IGBT transistors - High voltage and high amplification
ISOPLUSi4-PAK-3-
Hersteller:
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Herstellerteil #:
IXBF55N300
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Datenblatt:
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Series:
BIMOSFET™
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Voltage - Collector Emitter Breakdown (Max):
3000 V
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Current - Collector (Ic) (Max):
86 A
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Current - Collector Pulsed (Icm):
600 A
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EDA/CAD Modelle:
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Verfügbarkeit: 4715 Stck
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IXBF55N300 Allgemeine Beschreibung
By harnessing the unique strengths of MOSFETs and IGBTs, the BiMOSFET IXBF55N300 delivers exceptional performance and reliability in high voltage settings. The non-epitaxial construction and state-of-the-art fabrication processes ensure that these devices meet the stringent demands of modern applications. The positive voltage temperature coefficient of both the saturation voltage and the forward voltage drop of the intrinsic diode make these BiMOSFETs well-suited for parallel operation, enhancing overall efficiency and performance
Hauptmerkmale
- Increased power density
- Lower standby current
- Higher overall performance
Anwendung
- Switched-mode power
- Laser generator tech
- Pulser circuitry
Spezifikationen
Category | Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs | Series | BIMOSFET™ |
IGBT Type | - | Voltage - Collector Emitter Breakdown (Max) | 3000 V |
Current - Collector (Ic) (Max) | 86 A | Current - Collector Pulsed (Icm) | 600 A |
Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 55A | Power - Max | 357 W |
Switching Energy | - | Input Type | Standard |
Gate Charge | 335 nC | Td (on/off) @ 25°C | - |
Test Condition | - | Reverse Recovery Time (trr) | 1.9 µs |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IXBF55 | Product Category: | IGBT Transistors |
Technology: | Si | Mounting Style: | Through Hole |
Configuration: | Single | Collector- Emitter Voltage VCEO Max: | 3 kV |
Collector-Emitter Saturation Voltage: | 2.7 V | Maximum Gate Emitter Voltage: | - 25 V, + 25 V |
Continuous Collector Current at 25 C: | 86 A | Pd - Power Dissipation: | 357 W |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Series: | Very High Voltage | Packaging: | Tube |
Gate-Emitter Leakage Current: | +/- 200 nA | Product Type: | IGBT Transistors |
Factory Pack Quantity: | 25 | Subcategory: | IGBTs |
Tradename: | BIMOSFET | Unit Weight: | 0.176370 oz |
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In Stock: 4.715
Minimum Order: 1
Menge. | Einzelpreis | Ext. Preis |
---|---|---|
1+ | $115,512 | $115,51 |
30+ | $111,677 | $3.350,31 |
Die unten angegebenen Preise dienen nur als Referenz.
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